The influence of γ-irradiation on nitrogen configuration in nitrogen-doped single-walled carbon nanotubes

被引：2

作者：

Thurakitseree, Theerapol ^{[1
]}

Kramberger, Christian ^{[2
]}

Chanlek, Narong ^{[3
]}

Supruangnet, Ratchadaporn ^{[3
]}

Wisitsorraat, Anurat ^{[4
]}

Nakajima, Hideki ^{[3
]}

Maruyama, Shigeo ^{[5
,6
]}

机构：

[1] Maejo Univ, Program Appl Phys, Chiang Mai 50290, Thailand

[2] Univ Wien, Fac Phys, A-1090 Vienna, Austria

[3] Synchrotron Light Res Inst Publ Org, 111 Univ Ave, Muang Dist 30000, Nakhon Ratchasi, Thailand

[4] Natl Elect & Comp Technol Ctr NECTEC, Nanoelect & MEMS Lab, 112 Paholyothin Rd,Klong 1, Klongluang 12120, Pathumthani, Thailand

[5] Univ Tokyo, Dept Mech Engn, Tokyo 1138656, Japan

[6] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058564, Japan

来源：

关键词：

Single-walled carbon nanotube; Nitrogen-doped SWCNTs; Nitrogen configuration; Reforming; Gamma irradiation; GRAPHENE; GROWTH; RAMAN; ELECTRON;

D O I：

10.1016/j.diamond.2019.107569

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electronic properties of nitrogen-doped single-walled carbon nanotubes (N-doped SWCNTs) depend on carbon and nitrogen configuration. Depending on the intrinsic nitrogen structure, it can be either intrinsic p- or n-doping. Here, we have investigated the influence of soft gamma (gamma)-irradiation on the nitrogen configuration in vertically aligned N-doped SWCNT arrays. As the irradiation dose increased, pyridinic and graphitic nitrogen become more predominant. In general, the presence of holes refer to p-doping. However, XPS spectra show n-doping features, whereas the slight downshift in the G line position in Raman spectra is from compensating the ambient p-doping. The local transition of pi* nitrogen was also revealed by X-ray absorption spectroscopy.

引用

页数：5

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