Improving the semiconductor performance of SnO2/CdS/CuBi2O4 by optimizing the optical properties of the CuBi2O4 absorbent layer

被引:1
|
作者
Bliya, A. [1 ]
Lachhab, Saad Eddin [1 ]
Al Ibrahmi, E. [1 ]
机构
[1] IbnTofail Univ Kenitra, Fac Sci, Kenitra, Morocco
来源
MICRO AND NANOSTRUCTURES | 2023年 / 183卷
关键词
Absorbent layer; Efficiency performance; SCAPS-1D program;
D O I
10.1016/j.micrna.2023.207667
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this research, CuBi2O4 is numerically studied as an absorber layer in the SnO2/CdS/CuBi2O4 structure to evaluate and enhance its efficiency. Using the SCAPS-1D program, the CuBi2O4 layer underwent testing with variations in thickness, gap energy (Eg), temperature, and donor charge carrier concentration (Na). The results obtained indicated a significant improvement in the efficiency of this structure, achieving a yield of 32.89% with Voc = 1.302 V, Jsc = 39.556 mA/cm2, and FF = 86.95% when the CuBi2O4 layer was 1.6 mu m thickness, Eg = 1.6 eV, and Na = 1019 cm-3 under thermal conditions with temperature greater than 340 K. This efficiency value is higher than the 32.3% reported in the literature.
引用
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页数:7
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