Improving the semiconductor performance of SnO2/CdS/CuBi2O4 by optimizing the optical properties of the CuBi2O4 absorbent layer

In this research, CuBi2O4 is numerically studied as an absorber layer in the SnO2/CdS/CuBi2O4 structure to evaluate and enhance its efficiency. Using the SCAPS-1D program, the CuBi2O4 layer underwent testing with variations in thickness, gap energy (Eg), temperature, and donor charge carrier concentration (Na). The results obtained indicated a significant improvement in the efficiency of this structure, achieving a yield of 32.89% with Voc = 1.302 V, Jsc = 39.556 mA/cm2, and FF = 86.95% when the CuBi2O4 layer was 1.6 mu m thickness, Eg = 1.6 eV, and Na = 1019 cm-3 under thermal conditions with temperature greater than 340 K. This efficiency value is higher than the 32.3% reported in the literature.