Development of Flexible Semiconductors Based on g-C3N4/Cu2O P-N Heterojunction for Triboelectric Nanogenerator Application

This research aims to develop flexible semiconductors for triboelectric nanogenerator (TENG) applications. The sample powders of graphitic carbon nitride (g-C3N4) and copper (I) oxide (Cu2O) as N-type and P-type semiconductors, respectively, were synthesized. The semiconductors were prepared to be a composite film with alginate. The structure, morphology, and purity of the N- and P-type semiconductors were characterized using X-Ray diffraction and scanning electron microscopy techniques. Through the optical characterization, the N-type semiconductor showed the calculated energy band gap of 2.80 eV, while the P-type semiconductor was 1.90 eV. The P-N junction property of prepared samples was confirmed using a nonlinear current-voltage characteristic. After that, two flexible semiconductors were frictional paired for TENG. Through a vertical contact-separation mode, the P-N junction-based TENG produced a maximum output voltage and current of 3.90 V and 0.44 mu A, respectively, with a maximum output power of 0.35 mu W at 10 M omega. In summary, the present work achieved the preparation of flexible P- and N-type semiconductors. The feasibility to harvest the mechanical energy was demonstrated in the TENG configuration. This idea is crucial for the future development of flexible harvesting/sensing devices using a novel concept.