Features of the Composition and Photoluminescent Properties of Porous Silicon Depending on Its Porosity Index

被引：1
|
作者：
Lenshin, Aleksandr S. [1 ,2 ]
Peshkov, Yaroslav A. [1 ]
Barkov, Konstantin A. [1 ]
Grechkina, Margarita V. [1 ]
Lukin, Anatoliy N. [1 ]
Kannykin, Sergey V. [1 ]
Minakov, Dmitriy A. [1 ]
Chernousova, Olga V. [2 ]
机构：
[1] Voronezh State Univ, Phys Dept, Voronezh 394000, Russia
[2] Voronezh State Univ Engn Technol, Chem Dept, Voronezh 394000, Russia
来源：
COATINGS | 2023年 / 13卷 / 02期
基金：
俄罗斯科学基金会;
关键词：
porous silicon; photoluminescence; X-ray reflectometry; porosity; oxidation; spectroscopy; X-RAY SPECTROSCOPY; SURFACE;
D O I：
10.3390/coatings13020385
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Porous silicon samples with a porosity index of 5% to 80% were obtained in this work by electrochemical etching, and their photoluminescence properties were also studied. The porosity index was calculated according to the data from X-ray reflectometry. The composition of the surface was controlled by ultra-soft X-ray spectroscopy and infrared (IR) spectroscopy. The degree of the sample surface oxidation increased with the porosity enhancement. Two known mechanisms of photoluminescence in porous silicon were detected that are related to the composition and morphology of its surface. The values of the porosity index specifying the dominations of these mechanisms were determined. Enhancement of photoluminescence was shown to be attributed to an increase in the porosity index.
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页数：8
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