Demonstration of an Ultra-Compact and Broadband TM-Pass Polarizer Using Nano-Elliptical Holes

被引:0
|
作者
Yu, Yaxin [1 ]
Guo, Zhenzhao [1 ]
Wu, Shengbao [2 ]
Xiao, Jinbiao [1 ]
机构
[1] Southeast Univ, Natl Res Ctr Opt Sensing Commun Integrated Network, Sch Elect Sci & Engn, Nanjing 210096, Peoples R China
[2] Hebei Univ, Coll Phys Sci & Technol, Photon Informat Innovat Ctr, Hebei Prov Ctr Opt Sensing Innovat, Baoding 071002, Peoples R China
基金
中国国家自然科学基金;
关键词
Integrated optical devices; silicon photonics; TM-pass polarizer; nano-elliptical holes;
D O I
10.1109/LPT.2024.3368041
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An ultra-compact and large-bandwidth transversal magnetic (TM) polarizer is proposed and demonstrated. Low-loss propagation of TM modes is enabled by the creation of a bandgap using nano-elliptical holes, while transverse electric (TE) modes are effectively suppressed. Theoretical analysis results show that the proposed devices have a bandwidth (BW) over 305 nm (1394 nm similar to 1699 nm) with a polarization extinction ratio (PER) above 20 dB and an insertion loss (IL) less than 1.0 dB. This wide BW covers the S-, C-, L- and U-bands, as well as part of the O-band, within a compact total device length of only 3.996 mu m . Experimental results show IL < 1.0 dB and PER more than 20 dB in a BW of 220 nm. To our knowledge, this is currently the most compact TM polarizer on the 220 nm SOI platform, measuring 3.996 mu m x 0.58 mu m , while delivering the same level of performance.
引用
收藏
页码:461 / 464
页数:4
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