In this letter, a new bandwidth enhancement method for metasurface antennas (MAs) is proposed, by shifting the distant resonant frequency closer and reshaping the distorted radiation pattern of a high-order mode (HOM). A dominant mode (DM) and a far-separated HOM of the MA are excited simultaneously by a half-square loop. By scaling the central, corner, and edge patches with nonuniform factors while hardly affecting the DM, the HOM is shifted to merge the DM under the guidance of the characteristic mode analysis. Moreover, in order to improve the current distribution, the distorted radiation patterns as well as the gain flatness under the HOM without affecting the DM, the U-shaped slots with a band-notch characteristic are introduced on the central patches. The proposed antenna is fabricated and measured. The measured results are coincidental with the simulated ones. The results also show that the proposed antenna has a 10 dB return loss of 35.8% (4.34-6.23 GHz) and an in-band gain of 6.8-11.3 dBi with a single-layer structure and low profile of 0.06 ?(0) (the free-space wavelength at the center frequency).
机构:
Institute of Applied Physics, Russian Academy of Sciences, Nizhny NovgorodInstitute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
Zaitsev N.I.
Ilyakov E.V.
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Institute of Applied Physics, Russian Academy of Sciences, Nizhny NovgorodInstitute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
Ilyakov E.V.
Kuzikov S.V.
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Institute of Applied Physics, Russian Academy of Sciences, Nizhny NovgorodInstitute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
Kuzikov S.V.
Kulagin I.S.
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Institute of Applied Physics, Russian Academy of Sciences, Nizhny NovgorodInstitute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
Kulagin I.S.
Lygin V.K.
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Institute of Applied Physics, Russian Academy of Sciences, Nizhny NovgorodInstitute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
Lygin V.K.
Moiseev M.A.
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Institute of Applied Physics, Russian Academy of Sciences, Nizhny NovgorodInstitute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
Moiseev M.A.
Petelin M.I.
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Institute of Applied Physics, Russian Academy of Sciences, Nizhny NovgorodInstitute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
Petelin M.I.
Shevchenko A.S.
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Institute of Applied Physics, Russian Academy of Sciences, Nizhny NovgorodInstitute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod
机构:
Xi An Jiao Tong Univ, Sch Informat & Commun Engn, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Sch Informat & Commun Engn, Xian 710049, Peoples R China
Huang, Xiaoyu
Wei, Jianchuan
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Xi An Jiao Tong Univ, Sch Informat & Commun Engn, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Sch Informat & Commun Engn, Xian 710049, Peoples R China
Wei, Jianchuan
Qian, Bingyi
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Xi An Jiao Tong Univ, Sch Informat & Commun Engn, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Sch Informat & Commun Engn, Xian 710049, Peoples R China
Qian, Bingyi
Zhang, Aofang
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机构:
Honor Device Co Ltd, Beijing 100095, Peoples R ChinaXi An Jiao Tong Univ, Sch Informat & Commun Engn, Xian 710049, Peoples R China
Zhang, Aofang
Wei, Kunpeng
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Honor Device Co Ltd, Beijing 100095, Peoples R ChinaXi An Jiao Tong Univ, Sch Informat & Commun Engn, Xian 710049, Peoples R China
Wei, Kunpeng
Chen, Xiaoming
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Xi An Jiao Tong Univ, Sch Informat & Commun Engn, Xian 710049, Peoples R ChinaXi An Jiao Tong Univ, Sch Informat & Commun Engn, Xian 710049, Peoples R China