Formation of the Al3Si metastable phase in Al-Si films obtained by ion-beam sputtering according to experimental and theoretical data

被引：0

作者：

Terekhov, V. A. ^{[1
]}

Domashevskaya, E. P. ^{[1
]}

Kurganskii, S. I. ^{[1
]}

Nesterov, D. N. ^{[1
]}

Barkov, K. A. ^{[1
]}

Radina, V. R. ^{[1
]}

Velichko, K. E. ^{[1
]}

Zanin, I. E. ^{[1
]}

Sitnikov, A. V. ^{[2
]}

Agapov, B. L. ^{[1
]}

机构：

[1] Voronezh State Univ, Dept Solid State Phys & Nanostruct, Univ Skaya Pl 1, Voronezh 394018, Russia

[2] Voronezh State Tech Univ, Dept Solid State Phys, 20 Letiya Oktyabrya St 84, Voronezh 394006, Russia

来源：

THIN SOLID FILMS | 2023年 / 772卷

关键词：

Al; 3; Si; Aluminum; -silicon; Thin film; Metastable phase; Ultrasoft X-ray emission spectroscopy; Density functional theory; ELECTRON-PHONON INTERACTION; THERMODYNAMIC PROPERTIES; COMPOSITES; SYSTEM;

D O I：

10.1016/j.tsf.2023.139816

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Al1-xSix films were obtained by ion beam sputtering of an Al-Si composite target. Studies of the structure and electronic structure of Al1-xSix films were carried out. The structure and electronic structure of the films were investigated. The formation of an ordered phase of Al3Si was detected using X-ray diffraction and X-ray emission spectroscopy, as well as theoretical calculation of the band structure and Si L2.3-, Al L2.3-spectra. It is established that the Al3Si phase has a Cu3Au (Pm3m) type structure with a lattice parameter a=4.085 angstrom, the primitive sublattices of which are filled with atoms of two types Al and Si. It was found that the long-range order in Al1-xSix ion-beam films is sufficiently resistant to changes in the elemental composition from Al0.75Si0.25 to Al0.55Si0.45.

引用

页数：7

共 26 条

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