Formation of the Al3Si metastable phase in Al-Si films obtained by ion-beam sputtering according to experimental and theoretical data

被引：0

作者：

Terekhov, V. A. ^{[1
]}

Domashevskaya, E. P. ^{[1
]}

Kurganskii, S. I. ^{[1
]}

Nesterov, D. N. ^{[1
]}

Barkov, K. A. ^{[1
]}

Radina, V. R. ^{[1
]}

Velichko, K. E. ^{[1
]}

Zanin, I. E. ^{[1
]}

Sitnikov, A. V. ^{[2
]}

Agapov, B. L. ^{[1
]}

机构：

[1] Voronezh State Univ, Dept Solid State Phys & Nanostruct, Univ Skaya Pl 1, Voronezh 394018, Russia

[2] Voronezh State Tech Univ, Dept Solid State Phys, 20 Letiya Oktyabrya St 84, Voronezh 394006, Russia

来源：

THIN SOLID FILMS | 2023年 / 772卷

关键词：

Al; 3; Si; Aluminum; -silicon; Thin film; Metastable phase; Ultrasoft X-ray emission spectroscopy; Density functional theory; ELECTRON-PHONON INTERACTION; THERMODYNAMIC PROPERTIES; COMPOSITES; SYSTEM;

D O I：

10.1016/j.tsf.2023.139816

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Al1-xSix films were obtained by ion beam sputtering of an Al-Si composite target. Studies of the structure and electronic structure of Al1-xSix films were carried out. The structure and electronic structure of the films were investigated. The formation of an ordered phase of Al3Si was detected using X-ray diffraction and X-ray emission spectroscopy, as well as theoretical calculation of the band structure and Si L2.3-, Al L2.3-spectra. It is established that the Al3Si phase has a Cu3Au (Pm3m) type structure with a lattice parameter a=4.085 angstrom, the primitive sublattices of which are filled with atoms of two types Al and Si. It was found that the long-range order in Al1-xSix ion-beam films is sufficiently resistant to changes in the elemental composition from Al0.75Si0.25 to Al0.55Si0.45.

引用

页数：7

共 26 条

[1] Characterization of nanoporous Si thin films obtained by Al-Si phase separation
Fukutani, K
Ishida, Y
Aiba, T
Miyata, H
Den, T
APPLIED PHYSICS LETTERS, 2005, 87 (25) : 1 - 3
[2] ION-BEAM MIXING OF GAAS WITH FILMS OF AL, SI, AND THEIR NITRIDES
FASTOW, R
BRENER, R
KALISH, R
EIZENBERG, M
JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2586 - 2590
[3] Metastable phase formation during mechanical alloying of Al-Ge and Al-Si alloys
Chattopadhyay, K
Wang, XM
Aoki, K
Masumoto, T
JOURNAL OF ALLOYS AND COMPOUNDS, 1996, 232 (1-2) : 224 - 231
[4] Experimental investigation on formation of Al-Si clusters and nanocrystals in the segregation of ion-implanted Al on Si(100)
Gao Hao
Liao Long-Zhong
Zhang Zhao-Hui
ACTA PHYSICA SINICA, 2009, 58 (01) : 427 - 431
[5] METASTABLE PHASE FORMATION IN ION-BEAM MIXED AL-RE ALLOYS
NESBITT, CC
VANAKEN, DC
JOURNAL OF METALS, 1987, 39 (10): : A92 - A92
[6] METASTABLE PHASE FORMATION BY ION-BEAM MIXING FOR THE AL-MN SYSTEM
KIDO, Y
NORITAKE, T
KAWAMOTO, J
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (07): : 1181 - 1189
[7] EXPERIMENTAL PRODUCTION OF AL-SI ALLOYS IN A 3-PHASE FURNACE
BANNING, LH
HERGERT, WF
TRANSACTIONS OF THE AMERICAN INSTITUTE OF MINING AND METALLURGICAL ENGINEERS, 1955, 203 (05): : 630 - 633
[8] ELECTRICAL-RESISTANCE IN ION-BEAM MIXED AL/SI THIN-FILMS
XI, XX
RAN, QZ
LIU, JR
GUAN, WY
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 : 707 - 708
[9] Phase Formation and Electronic Structure Peculiarities in the Al1-x Si x Film Composites under the Conditions of Magnetron and Ion-Beam Sputtering
Terekhov, V. A.
Usol'tseva, D. S.
Serbin, O. V.
Zanin, I. E.
Kulikova, T. V.
Nesterov, D. N.
Barkov, K. A.
Sitnikov, A. V.
Lazaruk, S. K.
Domashevskaya, E. P.
PHYSICS OF THE SOLID STATE, 2018, 60 (05) : 1021 - 1028
[10] ION-BEAM INDUCED METASTABLE PT2SI3 PHASE .1. FORMATION, STRUCTURE, AND PROPERTIES
TSAUR, BY
MAYER, JW
TU, KN
JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) : 5326 - 5333

← 1 2 3 →