Thermal Transient Measurements of GaN HEMT Structures by Electrical Measurements

被引：3
|
作者：
Kristensen, Tobias [1 ]
Divinyi, Andreas [2 ]
Bremer, Johan [1 ]
Nilsson, Torbjorn M. J. [2 ]
Thorsell, Mattias [1 ,2 ]
机构：
[1] Chalmers Univ Technol, Gothenburg, Sweden
[2] Saab AB, Stockholm, Sweden
来源：
2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC | 2023年
关键词：
Gallium Nitride (GaN); electrothermal device modelling; thermal management; thermal sensors; thermal time constants; ALGAN/GAN HEMTS;
D O I：
10.23919/EuMIC58042.2023.10288814
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The thermal transient behaviour of GaN HEMT structures is studied using an integrated sensor placed in the close vicinity of a heat source. It is demonstrated that the method can extract time constants in the mu s range for a 5 mu m separation between the sensor and heat source. The study includes measurements that show how lateral separation, dissipated power, and proximity to the edge of the chip impact the temperature increase of a device. It is concluded that the method is promising for calibrating numerical models and evaluating packaging solutions.
引用
收藏
页码：293 / 296
页数：4
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