Selecting Temperature Sensitive Parameter for a Transient Thermal Impedance Measurements of E-Mode Power GaN HEMT

In the characterization of semiconductor devices, one of the stages is thermal characterization using transient thermal impedance. Following the measurement standards, it is performed using an indirect electrical method, based on a thermo-sensitive parameter (TSP). For most of the semiconductor devices, these parameters have static, unambiguous dependence on temperature. However, for GaN HEMTs due to dynamic effects, the obtained waveforms of the thermo-sensitive parameter may not meet the requirements. In this paper, the applicability of the popular thermo-sensitive parameters used in the thermal characterization of the power semiconductor devices for transient thermal impedance measurements of GaN HEMTs is discussed.