Switching of Hybrid Improper Ferroelectricity in Oxide Double Perovskites

被引:5
|
作者
Gayathri, Palanichamy [2 ]
Swamynathan, M. J. [2 ]
Shaikh, Monirul [2 ]
Ghosh, Ayana [1 ]
Ghosh, Saurabh [2 ]
机构
[1] Oak Ridge Natl Lab, Computat Sci & Engn Div, Oak Ridge, TN 37831 USA
[2] SRM Inst Sci & Technol, Fac Engn & Technol, Dept Phys & Nanotechnol, Kattankulathur 603203, Tamil Nadu, India
关键词
ELASTIC BAND METHOD; MOLECULAR-DYNAMICS; DRIVEN FERROELECTRICITY; POLARIZATION; MULTIFERROICS; CAMNTI2O6; REVERSAL;
D O I
10.1021/acs.chemmater.3c00108
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In ABO(3)-type perovskite oxides with Pnma symmetry, rotation (Q(R+), a(0)a(0)c(+)) and tilt (Q(T) , a(-)a(-)c(0)) of BO6 octahedra are the two primary order parameters. These order parameters establish an inherent trilinear coupling with anti-ferroelectric A-site displacement (Q(AFE)) to form the low-symmetry phase. The symmetry is further lowered in double perovskite oxides (DPOs) due to A/A ' cation ordering. It in turn makes these systems polar via hybrid improper ferroelectric mechanism, primarily driven by Q(R+) and Q(T) . Naturally, it has been believed that functionalities such as polarization can also be switched by tuning these primary order parameters. However, mystery around finding switching mechanism still remains. Our study based on density functional theory calculations combined with finite-temperature molecular dynamics simulations shows that the polarization switching is a two-step process, driven by out-of-phase rotation (Q(R-), a(0)a(0)c(-) when Q(T) = 0 or, a(-)a(-)b(-) when Q(T) not equal 0). A series of polar DPOs such as KLnFeOsO(6) [Ln = Sm, Gd, Dy, Tm (lanthanides) and Y (rare earth)], all belonging to P2(1) symmetry, are considered in this investigation. The polarization switching P ((P) over right arrow) occurs at a very high temperature of similar to 1150 K through a phase transition, from a polar (P2(1)) phase with P(+) to P(-) via a non-polar P4/n phase. The switching itself is metastable in nature. The switching (both polarization and spin state) is only observed for a very short period of time (similar to 23 ps) that poses limitation on using such a mechanism in memory device realization. We demonstrate a concurrent heating-cooling procedure to overcome such shortcoming. Simulations conducted at 600 K further imply that long lasting switching can be achieved, at least for 1.2 ns for 600 K, and ideally for an infinite time, if the material is heated just above the T-c followed by rapid cooling to a temperature below T-c.
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页码:6612 / 6624
页数:13
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