Single and Double Alkoxybenzothiadiazole-Dithienosilole-Based Nonfused Ring Electron Acceptors for Organic Solar Cells

被引:1
|
作者
Lee, Songmin [1 ]
Song, Chang Eun [2 ]
Ryu, Du Hyeon [2 ]
Kim, Jungyoon [1 ]
Kim, Joonghan [1 ]
Kang, In-Nam [1 ]
机构
[1] Catholic Univ Korea, Dept Chem, Bucheon 14662, South Korea
[2] Korea Res Inst Chem Technol KRICT, Adv Energy Mat Res Ctr, Yuseong 34114, Daejeon, South Korea
基金
新加坡国家研究基金会;
关键词
benzothiadiazole; dithienosilole; PBDB-T; nonfused ring electron acceptor; organic solar cells; SMALL-MOLECULE ACCEPTORS; PI-ASTERISK CONJUGATION; A-D-A; PHOTOVOLTAIC PERFORMANCE; EFFICIENCY; STABILITY; BENZOTHIADIAZOLE; POLYMERS; IMPROVE; LOCKING;
D O I
10.1021/acsaem.3c02429
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Three alkoxybenzothiadiazole (BTO)-based nonfused ring electron acceptors (BTO-FIC, BTO-T-FIC, and BTO-TT-FIC) were designed and synthesized with a central core unit with a single-BTO (A ') or double-BTO (A '-pi-A ') structure. In double-BTO core molecules, thiophene (T) or thienothiophene (TT) pi-linkers were introduced to explore the effect of these structural modifications on the optical and electrochemical properties. Tuning of the central core by using a single-BTO or double-BTO structure changed the absorption properties, highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) energy levels, and molecular crystallinity. The BTO-FIC, BTO-T-FIC, and BTO-TT-FIC acceptor films exhibited absorption peaks at 802, 783, and 802 nm, respectively, with strong shoulders, which complement well with those of the PBDB-T donor film. The HOMO/LUMO levels of BTO-FIC, BTO-T-FIC, and BTO-TT-FIC films were -5.79/-4.35, -5.65/-4.18, and -5.61/-4.18 eV, respectively. The HOMO/LUMO levels of the double-BTO core (A '-pi-A ')-based acceptors were upshifted by at least similar to 0.15 eV compared to those of the single-BTO core (A ')-based acceptor, leading to an increase in V-OC. In addition, the photovoltaic performance of devices based on these acceptors varied considerably, with the BTO-FIC, BTO-T-FIC, and BTO-TT-FIC devices displaying power conversion efficiencies (PCEs) of 10.6, 5.4, and 6.5%, respectively. The superior PCE of the BTO-FIC device is attributed to enhanced hole and electron mobilities, minimized carrier recombination, and high crystallinity, which contribute to higher values of J(SC) and PCE.
引用
收藏
页码:12503 / 12514
页数:12
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