Sensitivity improvement in electro-optic imaging based on polarization CMOS image sensor

被引：0

作者：

Okada, Ryoma ^{[1
]}

Mizuno, Maya ^{[2
]}

Takehara, Hironari ^{[1
]}

Haruta, Makito ^{[1
,3
]}

Tashiro, Hiroyuki ^{[1
,4
]}

Ohta, Jun ^{[1
]}

Sasagawa, Kiyotaka ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Div Mat Sci, Ikoma, Nara, Japan

[2] Natl Inst Informat & Commun Technol, Radio Res Inst, Koganei, Tokyo, Japan

[3] Chitose Inst Sci & Technol, Dept Optoelect Syst Engn, Chitose, Hokkaido, Japan

[4] Kyushu Univ, Fac Med Sci, Fukuoka, Japan

来源：

2023 ASIA-PACIFIC MICROWAVE CONFERENCE, APMC | 2023年

关键词：

Electro-optic imaging system; Polarization CMOS image sensor; On-pixel polarizer; Microwave imaging;

D O I：

10.1109/APMC57107.2023.10439856

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, we discuss the maximum signal-to-noise ratio (SNR) at 1 GHz in the electric field imaging system that we have developed using the electro-optic (EO) effect. To increase the detection sensitivity of electric field imaging, weak polarization changes must be detected. To increase the detection sensitivity while avoiding pixel saturation of the image sensor, we propose a structure in which a uniform polarizer is directly above the polarization image sensor. This increases the polarization modulation and reduces the incident light intensity, enabling a large amount of light to be incident on the EO crystal. The results of SNR measurements by varying the incident light intensity, we consider that an SNR of 57 dB or higher can be expected at an incident light level of 24 dBm or higher.

引用

页码：333 / 335

页数：3

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