A Fully Integrated High Efficiency 2.4 GHz CMOS Power Amplifier with Mode Switching Scheme for WLAN Applications

被引:0
|
作者
Shen, Haoyu [1 ,2 ]
Mo, Taishan [3 ]
Wu, Bin [3 ]
机构
[1] Chinese Acad Sci, Inst Microelect, Intelligent Mfg Elect R&D Ctr, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China
[3] Zhejiang CASEMIC Elect Technol Co Ltd, Hangzhou 310051, Peoples R China
来源
APPLIED SCIENCES-BASEL | 2023年 / 13卷 / 13期
关键词
CMOS power amplifier (PA); dual mode; power control; wireless local network (WLAN); NM CMOS; PREDISTORTER; DESIGN;
D O I
10.3390/app13137410
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A 3.3 V mode-switching RF CMOS power amplifier (PA) for WLAN applications is presented, which is integrated into a 55-nm bulk CMOS process. The proposed PA offers both static control and dynamic power control, allowing it to operate efficiently in both low-power and high-power modes. The pure low-power mode is achieved by reducing power cells, which are also used for linearization in high power mode. The low-power mode is achieved by reducing the number of power cells which are also used for linearization in the high-power mode. In the dynamic power control mode, the total AM-AM and AM-PM distortion is effectively compensated for by dynamically controlling the number of power cells and adjusting the matching input. The proposed PA achieves an output P1dB of 27.6 dBm with a PAE of 32.7% and an output P1dB of 17.7 dBm with a PAE of 10% in high-power and low-power modes, respectively. It is measured with an 802.11 n 64-quadrature-amplitude-modulation (MCS7) signal and shows a maximum average power of 19 dBm under an error-vector-magnitude (EVM) of -27 dB.
引用
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页数:24
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