Mechanically Coupled Single-Crystal Silicon MEMS Resonators for TCF Manipulation

被引:6
|
作者
Han, Jinzhao [1 ]
Xiao, Yuhao [1 ]
Chen, Wen [1 ]
Zhu, Kewen [1 ]
Wu, Guoqiang [1 ,2 ]
机构
[1] Wuhan Univ, Inst Technol Sci, Wuhan 430072, Peoples R China
[2] Wuhan Univ, Sch Microelect, Wuhan 430072, Peoples R China
基金
中国国家自然科学基金;
关键词
Resonators; Resonant frequency; Couplings; Micromechanical devices; Silicon; Crystals; Temperature measurement; Temperature compensation; mechanical coupling; TCF manipulation; resonators; microelectromechanical systems (MEMS);
D O I
10.1109/JMEMS.2023.3260079
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents mechanically coupled single-crystal silicon (SCS) microelectromechanical system (MEMS) resonators for temperature coefficient of frequency (TCF) manipulation. The reported mechanically coupled square extensional (SE) mode resonator consists of two square plates coupled with a beam or a third square plate purposely vibrating in another bulk mode. The SE mode resonators and the coupled structure can be considered as two kinds of individual resonators with different TCFs. Within the specific dimensions of the coupled resonator, the resonant frequencies of the two components are assumed to be equal. Hence, the TCF of the mechanically coupled resonator could be manipulated by adjusting the sizes of the coupling parts. The design and fabrication of coupled resonators have been completed in a degenerate-doped (100) SCS wafer. Measurement results illustrate that the TCFs of the coupled resonators can be purposely manipulated by adjusting the volume and equivalent spring constant ratios of the individual resonators. The minimal measured frequency shift is roughly +/- 10 ppm for an 18 MHz coupled SE mode resonator, over the entire industrial temperature range of -40 ? to 85 ?. This work highlights a novel and effective way to manipulate the TCFs of MEMS resonators via mechanical coupling. 2022-0197
引用
收藏
页码:271 / 278
页数:8
相关论文
共 50 条
  • [41] A mechanically coupled MEMS filter with high-Q width extensional mode resonators
    Wang, Wei
    Liu, Wenli
    Zhao, Junyuan
    Niu, Bo
    Wu, Zeyu
    Zhu, Yinfang
    Yang, Jinling
    Yang, Fuhua
    JOURNAL OF SEMICONDUCTORS, 2024, 45 (08)
  • [42] PREPARATION OF SINGLE-CRYSTAL SILICON PHOSPHIDE
    UGAI, YA
    SOKOLOV, LI
    GONCHAROV, EG
    LUKIN, AN
    INORGANIC MATERIALS, 1981, 17 (07) : 851 - 852
  • [43] Single-crystal silicon films on glass
    Gadkaree K.P.
    Soni K.
    Cheng S.-C.
    Kosik-Williams C.
    Journal of Materials Research, 2007, 22 (9) : 2363 - 2367
  • [44] The molar volume of single-crystal silicon
    Becker, P
    METROLOGIA, 2001, 38 (01) : 85 - 86
  • [45] IMPURITIES AND DEFECTS IN SILICON SINGLE-CRYSTAL
    MEDA, L
    CEROFOLINI, GF
    QUEIROLO, G
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1987, 15 (02) : 97 - 134
  • [46] THICKNESS MEASURES OF SINGLE-CRYSTAL SILICON
    OKSANICH, AP
    BABADZHANOV, LS
    MEASUREMENT TECHNIQUES, 1978, 21 (08) : 1098 - 1099
  • [47] Reshaping of single-crystal silicon microstructures
    Yang, EH
    Fujita, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (3A): : 1580 - 1583
  • [48] FRACTAL FRACTURE OF SINGLE-CRYSTAL SILICON
    TSAI, YL
    MECHOLSKY, JJ
    JOURNAL OF MATERIALS RESEARCH, 1991, 6 (06) : 1248 - 1263
  • [49] Single-crystal silicon films on glass
    Gadkaree, Kishor P.
    Soni, Kamal
    Cheng, Shang-Cong
    Kosik-Williams, Carlo
    JOURNAL OF MATERIALS RESEARCH, 2007, 22 (09) : 2363 - 2367
  • [50] ADVANCES IN SINGLE-CRYSTAL GROWTH OF SILICON
    MATLOCK, JH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C111 - C111