A Simple Design Method for Harmonic-Tuned GaN MMIC Power Amplifier Using Real-to-Real LPF Matching Network

被引:2
|
作者
Jiang, Xin [1 ,2 ]
Bo, Chunyue [1 ,2 ]
Wu, Xiuhao [1 ,2 ]
Dong, Qingyang [1 ,2 ]
Yang, Shuoxiong [1 ,2 ]
Wei, Ke [1 ,2 ]
Liu, Xinyu [1 ,2 ]
Luo, Weijun [1 ,2 ]
机构
[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China
来源
关键词
Manganese; Impedance; Power amplifiers; Transistors; Inductors; Harmonic analysis; Broadband amplifiers; GaN-on-Si; harmonic-tuned (HT); low-pass filtering (LPF); matching network (MN); monolithic microwave integrated circuit (MMIC); power amplifier (PA); PA;
D O I
10.1109/LMWT.2024.3376573
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter presents a simple and novel design method for harmonic-tuned (HT) GaN monolithic microwave integrated circuit (MMIC) power amplifier (PA) using low-pass filtering (LPF) impedance matching network (MN). With this method, the optimal fundamental load impedance matching and harmonics tuning can be achieved by using a simple real-to-real LPF MN, while the bias line of MMIC PA is skillfully incorporated into the MN. Based on it, the design procedure of an efficient MMIC PA is simpler and straightforward. As an example, a HT MMIC PA is designed and fabricated in 0.25 mu mGaN-on-Si technology. The experimental results show that the implemented HT PA delivers a maximum power-added efficiency (PAE) of 42%-50.8% and the saturated output power of39.2-40.8 dBm in the range of 2.6-3.6 GHz
引用
收藏
页码:528 / 531
页数:4
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