Highly Efficient Harmonic-Tuned GaN HEMT Power Amplifier for a 2.45 GHz ISM Band

被引：0
|
作者：
Goralczyk, Marcin [1 ]
机构：
[1] Warsaw Univ Technol, Inst Radioelect & Multimedia Technol, Warsaw, Poland
来源：
2018 22ND INTERNATIONAL MICROWAVE AND RADAR CONFERENCE (MIKON 2018) | 2018年
关键词：
GaN HEMT; power amplifier; HPA; microwaves; harmonic-tuned; CGH40010; HIGH LINEARITY;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a design of highly efficient high power amplifier with CGH40010 transistor. The amplifier provides more than 15W of output power and 61% PAE over a 2.4 GHz to 2.5 GHz frequency range. A method of harmonic tuning is applied in the design. By the use of this method it was possible to achieve even 30% more power than the transistor is specified to deliver, while maintaining high gain and efficiency.
引用
收藏
页码：108 / 111
页数：4
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