Plasmon-enhanced deep ultraviolet Micro-LED arrays for solar-blind communications

被引:14
|
作者
Zhang, Siyao [1 ,2 ]
He, Rui [1 ,3 ]
Duo, Yiwei [1 ,3 ]
Chen, Renfeng [1 ,3 ]
Wang, Ligang [2 ]
Wang, Junxi [1 ,3 ]
Wei, Tongbo [1 ,3 ]
机构
[1] Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting Technol, Beijing 100083, Peoples R China
[2] Inner Mongolia Univ, Sch Phys Sci & Technol, Key Lab Semicond Photovolta Technol Inner Mongolia, 235 West Daxue St, Hohhot 010021, Peoples R China
[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
32;
D O I
10.1364/OL.496397
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Localized surface plasmon resonance (LSPR)-enhanced deep ultraviolet (DUV) Micro-light emitting diodes (Micro LEDs) using Al nanotriangle arrays (NTAs) are reported for improving the -3 dB modulation bandwidth. Through self assembled nanospheres, the high-density Al NTAs arrays are transferred into the designated p-AlGaN region of the Micro-LEDs, realizing the effect of LSPR coupling. A 2.5 fold enhancement in photoluminescence (PL) intensity is demonstrated. Combined with the PL intensity ratio at 300 K and 10 K, internal quantum efficiency (IQE) may be increased about 15-20% by the plasmonic effect and the carrier lifetime decreases from 1.15 ns to 0.82 ns, suggesting that LSPR accelerates the spontaneous emission rate. Resulting from the improvement of the IQE, the electroluminescence intensity of Micro-LED arrays with LSPR is obviously increased. Meanwhile, the -3 dB bandwidth of 6 x 6 Micro-LED arrays is increased from 180 MHz to 300 MHz at a current density of 200 A/cm2. A potential way is proposed to further increase both the IQE and the modulation bandwidth of DUV Micro-LEDs.& COPY; 2023 Optica Publishing Group
引用
收藏
页码:3841 / 3844
页数:4
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