Surface-Potential-Based Drain Current Model for Ambipolar Organic TFTs

被引：2

作者：

He, Hongyu ^{[1
,4
]}

Yin, Junli ^{[2
]}

Lin, Xinnan ^{[3
]}

Zhang, Shengdong ^{[4
]}

机构：

[1] Yangtze Univ, Sch Elect & Informat, Jingzhou 434023, Peoples R China

[2] Univ South China, Sch Elect Engn, Hengyang 421001, Peoples R China

[3] Anhui Polytech Univ, Sch Integrated Circuits, Wuhu 241000, Peoples R China

[4] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518005, Peoples R China

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2024年 / 71卷 / 01期

关键词：

Organic thin film transistors; Integrated circuit modeling; Semiconductor device modeling; Electron traps; Computational modeling; Mathematical models; Organic semiconductors; Ambipolar organic thin-film transistor (OTFT); drain current model; surface potential; temperature characteristics; trap states; THIN-FILM TRANSISTORS; FIELD-EFFECT MOBILITY; TRANSPORT; PHYSICS;

D O I：

10.1109/TED.2023.3264718

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A surface-potential-based drain current model is presented for ambipolar organic thin-film transistors (OTFTs). First, following the multiple trapping and release (MTR) conduction mechanism, a drain current model is presented for unipolar OTFTs considering exponentially distributed trap state density in the energy gap of an organic semiconductor. Next, from the model for unipolar OTFTs, analyzing electrons or (and) holes in different regimes, the model for ambipolar OTFTs is presented. The presented model can describe the drain current by compact expressions and can estimate the trap states density. The model is verified by available experimental data considering temperature characteristics.

引用

页码：11 / 17

页数：7

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