Influences of the inhomogeneity of the ferroelectric thin films on switching current

被引：8
|
作者：
Do Kim, Kyung [1 ,2 ]
Lee, Yong Bin [1 ,2 ]
Lee, Suk Hyun [1 ,2 ]
Lee, In Soo [1 ,2 ]
Ryoo, Seung Kyu [1 ,2 ]
Byun, Seungyong [1 ,2 ]
Lee, Jae Hoon [1 ,2 ]
Kim, Hani [1 ,2 ]
Park, Hyeon Woo [1 ,2 ]
Hwang, Cheol Seong [1 ,2 ]
机构：
[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea
来源：
MRS COMMUNICATIONS | 2023年 / 13卷 / 05期
基金：
新加坡国家研究基金会;
关键词：
Defects; Electronic material; Electrical properties; Ferroelectricity; Film;
D O I：
10.1557/s43579-023-00365-y
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This work examined the development of the transient current of a ferroelectric thin film such as (Hf,Zr)O-2, Pb(Zr,Ti)O-3, and (Al,Sc)N to clarify the origin of the decrease in transient current during switching. Toward this end, the measured transient switching current of the ferroelectric capacitor was simulated while considering the coercive voltage distribution across the capacitor area. Furthermore, to understand how the non-ferroelectric interfacial layer behaved, the Al2O3 capacitor was serially connected to the ferroelectric capacitors. The coercive voltage distribution of the ferroelectric layer determined the slope of the current plateau, and the non-ferroelectric layer behaved like resistance during switching.
引用
收藏
页码：825 / 833
页数：9
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