Microstructural evolution of extended defects in 25 μm thick GaN homo-epitaxial layers

被引：0

作者：

Liao, Michael E. ^{[1
]}

Mahadik, Nadeemullah A. ^{[1
]}

Gallagher, James C. ^{[1
]}

Gunning, Brendan P. ^{[2
]}

Kaplar, Robert J. ^{[2
]}

Anderson, Travis J. ^{[1
]}

机构：

[1] U S Naval Res Lab, Washington, DC 20375 USA

[2] Sandia Natl Labs, Albuquerque, NM 87123 USA

来源：

APPLIED PHYSICS LETTERS | 2023年 / 122卷 / 24期

关键词：

RAY; DIODES; PERFORMANCE; SUBSTRATE; CRYSTALS; GROWTH;

D O I：

10.1063/5.0152720

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defect origins and their propagation behavior were investigated in 25 mu m thick homo-epitaxial GaN layers grown on ammono-thermal and void-assisted separation (VAS) substrates using multi-vector x-ray topography in both transmission and reflection geometries. Complex inclusions were identified and their microstructure was analyzed. Additionally, generation of threading dislocation clusters during epitaxial growth is analyzed. Various defects are delineated from the substrate vs epitaxial layers. Growth on the ammono-thermal substrate led to less defective and flatter epitaxial layers compared to the growth on the VAS substrate. Determining the origins and microstructure of defects is crucial toward developing defect mitigation strategies for reliable GaN devices.

引用

页数：6

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