Simulation and Modeling of Silicon Semiconductor Devices and Sensors

被引：0

作者：

Schwarz, Mike ^{[1
]}

Darbandy, Ghader ^{[1
]}

Roemer, Christian ^{[1
,2
]}

Dersch, Nadine ^{[1
]}

Kloes, Alexander ^{[1
]}

机构：

[1] THM Univ Appl Sci, NanoP, Giessen, Germany

[2] Univ Rovira i Virgili, DEEEA, Tarragona, Spain

来源：

2023 30TH INTERNATIONAL CONFERENCE ON MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEM, MIXDES | 2023年

关键词：

modeling; simulation; semiconductor; device; sensor;

D O I：

10.23919/MIXDES58562.2023.10203247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon or general semiconductor device and sensor simulation/modeling is demanded by both, academia and industry. Nowadays, the increase in costs and resources for both domains require strategies to reduce those. This means to investigate new technologies and/or use cases during research and development by simulation/modeling, e.g. process corners by calibrated process simulations. These strategies allow in academia and industry for faster prototyping in all development phases to enhance yield, lower costs, decrease wafer fab process duration, improve technologies, and many more. In this lecture, typical examples of research and industry are presented. Key aspects during simulation/modeling are discussed by several examples.

引用

页码：42 / 46

页数：5

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