High-Power Laser Diode Arrays Based on (Al)GaAs/AlGaAs/GaAs and GaAsP/GaInP/GaAs Quantum-Well Heterostructures

被引：1
|
作者：
Gul'tikov, N. V. [1 ]
Telegin, K. Yu. [1 ]
Andreev, A. Yu. [1 ]
Shestak, L. I. [2 ]
Panarin, V. A. [2 ]
Starynin, M. Yu. [2 ]
Marmalyuk, A. A. [1 ]
Ladugin, M. A. [1 ]
机构：
[1] LLC Sigm Plus, Moscow 117342, Russia
[2] Res & Prod Enterprise Inject Ltd, Saratov 410033, Russia
来源：
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2023年 / 50卷 / SUPPL 12期
关键词：
high-power laser diode arrays; aluminum-free heterostructure; LAMBDA=808 NM; GROUP-III; BARS;
D O I：
10.3103/S1068335623602224
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report theoretical and experimental results of comparison of high-power laser diode arrays made of (Al)GaAs/AlGaAs and GaAsP/GaInP heterostructures for the spectral range from 800 to 810 nm. The best results are demonstrated for arrays based on GaAsP/GaInP heterostructures. The maximum values of the output optical power of 1-cm-long laser diode arrays in the quasi-cw pump regime reach 370-380 W. The possible reason for the difference in the output powers of the arrays based on the material systems in question is discussed and methods for further increasing the radiation power are presented.
引用
收藏
页码：S1391 / S1397
页数：7
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