Superconductivity induced by doping holes in the nodal-line semimetal NaAlGe

被引:2
|
作者
Ikenobe, Toshiya [1 ]
Yamada, Takahiro [2 ]
Hirai, Daigorou [1 ,3 ]
Yamane, Hisanori [2 ]
Hiroi, Zenji [1 ]
机构
[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan
[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Katahira 2-1-1,Aoba Ku, Sendai 9808577, Japan
[3] Nagoya Univ, Dept Appl Phys, Nagoya 4648603, Japan
基金
日本学术振兴会;
关键词
TRANSITION;
D O I
10.1103/PhysRevMaterials.7.104801
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The nodal-line semimetals NaAlSi and NaAlGe have significantly different ground states despite having similar electronic structures: NaAlSi exhibits superconductivity <7 K, while NaAlGe exhibits semiconductive electrical conductivity at low temperatures, indicating the formation of a pseudogap at similar to 100 K. The origin of the pseudogap in NaAlGe is unknown but may be associated with excitonic instability. We investigated hole-doping effects on the ground state in the solid solution Na(Al1-xZnx)Ge and discovered that the pseudogap is suppressed continuously with increasing Zn content, followed by the appearance of a superconducting dome with the highest transition temperature of 2.8 K. This superconductivity most likely results from excitonic fluctuations.
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页数:8
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