Uncovering cation disorder in ternary Zn1+xGe1-x(N1-xOx)2 and its effect on the optoelectronic properties

被引:1
|
作者
Wang, Zhenyu [1 ,2 ]
Toebbens, Daniel M. [1 ]
Franz, Alexandra [1 ]
Savvin, Stanislav [3 ]
Breternitz, Joachim [1 ,4 ]
Schorr, Susan [1 ,2 ]
机构
[1] Helmholtz Zentrum Berlin Mat & Energie, Dept Struct & Dynam Energy Mat, Hahn Meitner Pl 1, D-14109 Berlin, Germany
[2] Free Univ Berlin, Dept Geosci, Malteserstr 74-100, D-12249 Berlin, Germany
[3] Inst Laue Langevin, Ave Martyrs, F-38000 Grenoble, France
[4] FH Munster Univ Appl Sci, Stegerwaldstr 39, D-48565 Steinfurt, Germany
关键词
ZNGEN2;
D O I
10.1039/d3tc02650g
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ternary nitride materials, such as ZnGeN2, have been considered as hopeful optoelectronic materials with an emphasis on sustainability. Their nature as ternary materials has been ground to speculation of cation order/disorder as a mechanism to tune their bandgap. We herein studied the model system Zn1+xGe1-x(N1-xOx)(2) including oxygen - which is often a contaminant in nitride materials - using a combination of X-ray and neutron diffraction combined with elemental analyses to provide direct experimental evidence for the existence of cation swapping in this class of materials. In addition, we combine our results with UV-VIS spectroscopy to highlight the influence of disorder on the optical bandgap.
引用
收藏
页码:1124 / 1131
页数:8
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