500 V breakdown voltage in β-Ga2O3 laterally diffused metal-oxide-semiconductor field-effect transistor with 108 MW/cm2 power figure of merit

The authors' present a silicon-on-insulator (SOI) laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) with beta-Ga2O3 , which is a large bandgap semiconductor (beta-LDMOSFET), for increasing breakdown voltage (V-BR) and power figure of merit. The fundamental purpose is to use a beta-Ga2O3 semiconductor instead of silicon material due to its large breakdown field. The characteristics of beta-LDMOSFET are analysed to those of standard LDMOSFET, such as V-BR, ON-resistance (R-ON), power figure of merit (PFOM), and radio frequency (RF) performances. The effects of RF, such as gate-drain capacitance (C-GD), gate-source capacitance (C-GS), transit frequency (f(T)), and maximum frequency of oscillation (f(MAX)) have been investigated. The beta-LDMOSFET structure outperforms performance in the V-BR by increasing it to 500 versus 84.4 V in standard LDMOSFET design. The suggested beta-LDMOSFET has R-ON similar to 2.3 m Omega.cm(-2) and increased the PFOM (V-BR(2)/R-ON) to 108.6 MW/cm(2). All the simulations are done with TCAD and simulation models are calibrated with the experimental data.