Effects of phonon bandgap on phonon-phonon scattering in ultrahigh thermal conductivity θ-phase TaN

被引:1
|
作者
Wu, Chao [1 ,4 ]
Liu, Chenhan [1 ,2 ,3 ]
机构
[1] Nanjing Univ, Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[2] Nanjing Normal Univ, Sch Energy & Mech Engn, Micro & Nanoscale Thermal Measurement & Thermal Ma, Nanjing 210023, Peoples R China
[3] Nanjing Normal Univ, Jiangsu Key Lab Numer Simulat Large Scale Complex, Nanjing 210023, Peoples R China
[4] Southeast Univ, Sch Mech Engn, Jiangsu Key Lab Design & Manufacture Micronano Bio, Nanjing 211100, Peoples R China
基金
中国国家自然科学基金;
关键词
ultrahigh thermal conductivity; phonon-phonon scattering phase space; first-principles calculation; phonon bandgap;
D O I
10.1088/1674-1056/acb201
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Phonon bandgap typically has a significant effect on phonon-phonon scattering process. In this work, the effects of mass modified phonon bandgap in theta-phase TaN are systemically investigated by the means of first-principles calculations with linearized Boltzmann transport equation. Through detailed calculations, we find that phonon bandgap has a significant effect on three-phonon process while exhibits a much weaker effect on four-phonon process. The reason for the ultrahigh thermal conductivity of theta-phase TaN is the long lifetime of phonons including both three-phonon and four-phonon processes, which originates from the weak phonon anharmonicity and large phonon bandgap-induced small phonon-phonon scattering phase space. This work advances the understanding of phonon bandgap effects on phonon transport.
引用
收藏
页数:6
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