Switching (Turn-on) Dynamics of Low-Voltage InP Homothyristors

被引：0

作者：

Slipchenko, S. O. ^{[1
]}

Soboleva, O. S. ^{[1
]}

Podoskin, A. A. ^{[1
]}

Kirichenko, Y. K. ^{[1
]}

Bagaev, T. A. ^{[1
]}

Yarotskaya, I. V. ^{[1
]}

Pikhtin, N. A. ^{[1
]}

机构：

[1] Ioffe Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2023年 / 57卷 / 03期

基金：

俄罗斯科学基金会;

关键词：

thyristor; impact ionization; drift-diffusion model; POWER;

D O I：

10.1134/S1063782623050159

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A series of heterostructure designs of low-voltage InP homothyristors have been investigated using numerical simulation methods. The design with a space charge layer formed in the p-base region of the n-p-n transistor part was considered as the base one. The dynamic characteristics and processes that determine the rate of transition to the on state are investigated. It is shown that as the p-base thickness increases from 1 to 2.6 mu m, the maximum on-state currents increase from 70 to 90 A, while the minimum turn-on transition time is 11 ns at a maximum blocking voltage of 55 V. It is shown that the operation efficiency in the on state is determined by the residual voltage. Residual voltage decreases with a decrease in the thickness of the p-base.

引用

页码：166 / 171

页数：6

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