A paradigm shift in analog applications through reconfigurable FET

This paper presents the radio frequency (RF) and linearity analysis of a dual dielectric (DD) reconfigurable FET (RFET) for a wide variety of analog applications. A RFET can either act as a MOSFET or a TFET based on the electric potential applied externally over source and drain regions. The impact of DD reduces ambipolar current to large extent. Hence, DD-RFET is a multi functional (MF) device that can be configured in such a way that superior analog properties can be obtained at reduced static power loss. We found that DD-RFET processes a threshold voltage (������������ℎ)= 0.2 V, transconductance (������������) = 4 mS, and gain bandwidth product (GBP) = 0.4 THz in nMOSFET configuration, while ������������ℎ = 0.64 V and subthreshold swing (SS) = 34 mV/decade in nTFET configuration. Also, DD-RFET has a ������������ℎ= 0.14 V, ������������= 0.3 mS, and GBP = 17 GHz in pMOSFET configuration, while ������������ℎ = 0.52 V and SS = 31 mV/decade in pTFET configuration. Hence, DD-RFET eases circuit design as this MF device helps to provide high performance and low power using multi threshold (MT) technology. Also, we found that MOSFET has better linearity at low bias voltage and as the gain increases with the supply, promotes noise and distortion in the output. However, TFET produces more stable results at higher bias voltage than MOSFET. Hence, there is a clear trade-off in active power and linearity exist in RFET designs.