Single-crystalline PbTe film growth through reorientation

被引:9
|
作者
Jung, Jason [1 ,2 ]
Schellingerhout, Sander G. [1 ,2 ]
van der Molen, Orson A. H. [1 ,2 ]
Peeters, Wouter H. J. [1 ]
Verheijen, Marcel A. [1 ]
Bakkers, Erik P. A. M. [1 ]
机构
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[2] Eurofins Mat Sci Netherlands BV, NL-5656 AE Eindhoven, Netherlands
基金
欧洲研究理事会;
关键词
BALLISTIC TRANSPORT; QUANTUM; GE; GAP;
D O I
10.1103/PhysRevMaterials.7.023401
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Heteroepitaxy enables the engineering of novel properties, which do not exist in a single material. Two principal growth modes are identified for material combinations with a large lattice mismatch, Volmer-Weber, and Stranski-Krastanov. Both lead to the formation of three-dimensional islands, hampering the growth of flat defect-free thin films. This limits the number of viable material combinations. Here, we report a distinct growth mode found in molecular beam epitaxy of PbTe on InP initiated by pregrowth surface treatments. Early nucleation forms islands analogous to the Volmer-Weber growth mode, but film closure exhibits a flat surface with atomic terracing. Remarkably, despite multiple distinct crystal orientations found in the initial islands, the final film is single crystalline. This is possible due to a reorientation process occurring during island coalescence, facilitating high quality heteroepitaxy despite the large lattice mismatch, difference in crystal structures, and diverging thermal expansion coefficients of PbTe and InP. This growth mode offers a new strategy for the heteroepitaxy of dissimilar materials and expands the realm of possible material combinations.
引用
收藏
页数:7
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