Influence of time dependent laser-irradiation for tuning the linear-nonlinear optical response of quaternary Ag10In15S15Se60 films for optoelectronic applications

被引:15
|
作者
Parida, Abinash [1 ]
Alagarasan, D. [2 ,3 ]
Ganesan, R. [2 ]
Bisoyi, Sagar [4 ]
Naik, R. [1 ]
机构
[1] ICT IOC Bhubaneswar, Dept Engn & Mat Phys, Bhubaneswar 751013, India
[2] Indian Inst Sci, Dept Phys, Bengaluru 560012, India
[3] NITTE Meenakshi Inst Technol, Dept Phys, Bengaluru 560064, India
[4] KIIT Deemed be Univ, Sch Appl Sci, Dept Phys, Bhubaneswar 751024, India
关键词
THIN-FILMS; REFRACTIVE-INDEX; ELECTRICAL-PROPERTIES; CHALCOGENIDE; PARAMETERS; SE; PHOTOCONDUCTIVITY; CONSTANTS; AS2SE3; GAP;
D O I
10.1039/d2ra07981j
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The impact of laser irradiation on thin films results in multiple beneficial modifications of their structural, morphological, nonlinear-linear properties for optoelectronics applications. This work deals with the thermally evaporated Ag10In15S15Se60 films and post-laser irradiation to study the variations in structural and optical properties. The current investigation was carried out for different laser irradiation time durations such as 0, 10, 20, 30, and 60 minutes by 532 nm laser (2.34 eV). According to the X-ray diffraction analysis, all thin films have polycrystalline character. The change in the surface morphology after being exposed to the laser has been checked by FESEM, whereas the presence of constitutional elements has been verified by the EDX study. The related changes with laser irradiation in the optical properties, including both linear and nonlinear, were studied using UV-Vis spectroscopy data. The irradiation caused an enhancement in the transmission, and the absorption edge moved towards a lower wavelength, increasing the bandgap energy from 1.71 eV to 1.88 eV. The refractive index reduced as a result of the film's altered structure. The behaviour of the refractive index satisfies Moss's rule (E(g)n(4) = const). The nonlinear refractive index, first-order and 3rd order nonlinear susceptibility, is found to be decreased with laser irradiation. The dielectric parameters are also observed to be decreased with irradiation. Considering all the alterations in its properties caused by irradiation, the Ag10In15S15Se60 sample could be a favourable material for various photonic devices.
引用
收藏
页码:4236 / 4248
页数:13
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