A Wideband Power Amplifier in 65 nm CMOS Covering 25.8 GHz-36.9 GHz by Staggering Tuned MCRs

被引:5
|
作者
Wang, Zhiqiang [1 ,2 ,3 ]
Wang, Xiaosong [1 ,2 ,3 ]
Liu, Yu [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, Res & Dev Ctr Healthcare Elect, Inst Microelect, Beijing 100029, Peoples R China
[2] Chinese Acad Sci, Beijing Key Lab RF Technol Next Generat Commun, Inst Microelect, Beijing 100029, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
broadband power amplifier; symmetrical magnetically coupled resonator (MCR); stagger tuning; current-combining; OUTPUT POWER; DESIGN; GAIN; PAE;
D O I
10.3390/electronics12173566
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
Broadband millimeter-wave power amplifiers have attracted much attention and have wide applications for 5G communication, satellite communication, radar, sensing, etc. Yet, it is challenging to design a power amplifier with broadband small-signal gain and power performance simultaneously. In this study, a transformer-based symmetrical magnetically coupled resonator (MCR) matching network for broadband output matching and stagger-tuned MCRs are used to achieve both broadband small- and large-signal performance. Also, to enhance the gain for the power amplifier, a three-stage common-source pseudo-differential structure is adopted to mitigate the low-gain issue due to stagger tuning, and the shunt resistors aimed to decrease the Q factor of the MCRs. We used the in-phase two-way current combined with microstrip transmission lines to increase the output power. Designed in 65 nm bulky CMOS technology, the power amplifier presents a 3 dB small-signal gain bandwidth from 25.8 GHz to 36.9 GHz, indicating a peak gain of 25.87 dB at 30.5 GHz. The power amplifier demonstrates a 17.84 dBm saturated output power (Psat) at 31 GHz and a 24.37% peak power added efficiency (PAEmax) at 28 GHz. The power amplifier achieves a flat Psat of 17.44 & PLUSMN; 0.4 dBm, a PAEmax of 22.59 & PLUSMN; 1.78%, and an OP1dB of 13.78 & PLUSMN; 0.31 dBm from 26 GHz to 36 GHz.
引用
收藏
页数:21
相关论文
共 50 条
  • [31] A 60 GHz Drain-Source Neutralized Wideband Linear Power Amplifier in 28 nm CMOS
    Thyagarajan, Siva V.
    Niknejad, Ali M.
    Hull, Christopher D.
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2014, 61 (08) : 2253 - 2262
  • [32] A 240GHz Wideband QPSK Transmitter in 65nm CMOS
    Kang, Shinwon
    Thyagarajan, Siva V.
    Niknejad, Ali M.
    2014 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2014, : 353 - 356
  • [33] A 240 GHz Fully Integrated Wideband QPSK Receiver in 65 nm CMOS
    Thyagarajan, Siva V.
    Kang, Shinwon
    Niknejad, Ali M.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2015, 50 (10) : 2268 - 2280
  • [34] A 240 GHz Fully Integrated Wideband QPSK Transmitter in 65 nm CMOS
    Kang, Shinwon
    Thyagarajan, Siva V.
    Niknejad, Ali M.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2015, 50 (10) : 2256 - 2267
  • [35] A 60 GHz 14 dBm power amplifier with a transformer-based power combiner in 65 nm CMOS
    Zhao, Dixian
    He, Ying
    Li, Lianming
    Joos, Dieter
    Philibert, Wim
    Reynaert, Patrick
    INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2011, 3 (02) : 99 - 105
  • [36] A 240GHz Wideband QPSK Receiver in 65nm CMOS
    Thyagarajan, Siva V.
    Kang, Shinwon
    Niknejad, Ali M.
    2014 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM, 2014, : 357 - 360
  • [37] A 2-22 GHz CMOS wideband distributed power amplifier
    Zhang, Ying
    Ma, Kaixue
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2017, 59 (12) : 3107 - 3111
  • [38] A 80∼101GHz Amplifier in 65nm CMOS process
    Su, Zemin
    Su, Guodong
    Liu, Xiandong
    Lei, Yuchao
    Qiu, Zeqi
    Su, Jiangtao
    Sun, Lingling
    2018 11TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETER WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT2018), VOL 1, 2018,
  • [39] A 14-91 GHz Distributed Amplifier in 65-nm CMOS
    Hsu, Ching-Min
    Wang, Yunshan
    Wang, Huei
    2020 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2020, : 1009 - 1011
  • [40] 142 GHz amplifier with 18.5 dB gain and 7.9 mW DC power in 65 nm CMOS
    Meng, Xiangyu
    Chi, Baoyong
    Jia, Haikun
    Kuang, Lixue
    Wang, Zhihua
    ELECTRONICS LETTERS, 2014, 50 (21) : 1513 - +