Dissipationless layertronics in axion insulator MnBi2Te4

被引:7
|
作者
Li, Shuai [1 ,2 ]
Gong, Ming [3 ]
Cheng, Shuguang [4 ]
Jiang, Hua [2 ,5 ]
Xie, X. C. [3 ,5 ,6 ]
机构
[1] Soochow Univ, Sch Phys Sci & Technol, Suzhou 215006, Peoples R China
[2] Soochow Univ, Inst Adv Study, Suzhou 215006, Peoples R China
[3] Peking Univ, Int Ctr Quantum Mat, Sch Phys, Beijing 100871, Peoples R China
[4] Northwest Univ, Dept Phys, Xian 710069, Peoples R China
[5] Fudan Univ, Interdisciplinary Ctr Theoret Phys & Informat Sci, Shanghai 200433, Peoples R China
[6] Hefei Natl Lab, Hefei 230088, Peoples R China
基金
中国国家自然科学基金; 国家重点研发计划;
关键词
axion insulator MnBi2Te4; layertronics; antiferromagnetic domain wall; dissipationless transport; TOPOLOGICAL INSULATORS; SPIN PRECESSION; VALLEY VALVE; GRAPHENE; FILTER; SPINTRONICS; TRANSPORT;
D O I
10.1093/nsr/nwad262
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Surface electrons in axion insulators are endowed with a topological layer degree of freedom followed by exotic transport phenomena, e.g., the layer Hall effect. Here, we propose that such a layer degree of freedom can be manipulated in a dissipationless way based on the antiferromagnetic MnBi2Te4 with tailored domain structure. This makes MnBi2Te4 a versatile platform to exploit the 'layertronics' to encode, process and store information. Importantly, the layer filter, layer valve and layer reverser devices can be achieved using the layer-locked chiral domain wall modes. The dissipationless nature of the domain wall modes makes the performance of the layertronic devices superior to those in spintronics and valleytronics. Specifically, the layer reverser, a layer version of the Datta-Das transistor, also fills up the blank in designing the valley reverser in valleytronics. Our work sheds light on constructing new generation electronic devices with high performance and low-energy consumption in the framework of layertronics.
引用
收藏
页数:8
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