Engineering the Strain and Interlayer Excitons of 2D Materials via Lithographically Engraved Hexagonal Boron Nitride

被引:2
|
作者
Hsieh, Yu-Chiang [1 ]
Lin, Zhen-You [1 ]
Fung, Shin-Ji [1 ]
Lu, Wen-Shin [2 ,3 ]
Ho, Sheng-Chin [1 ]
Hong, Siang-Ping [1 ]
Ho, Sheng-Zhu [1 ]
Huang, Chiu-Hua [1 ]
Watanabe, Kenji [4 ]
Taniguchi, Takashi [5 ]
Chan, Yang-Hao [2 ,6 ]
Chen, Yi-Chun [1 ,7 ]
Wu, Chung-Lin [1 ,7 ]
Chen, Tse-Ming [1 ,7 ]
机构
[1] Natl Cheng Kung Univ, Dept Phys, Tainan 701, Taiwan
[2] Acad Sinica, Inst Atom & Mol Sci, Taipei 106, Taiwan
[3] Natl Yang Ming Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan
[4] Natl Inst Mat Sci, Res Ctr Funct Mat, Tsukuba, Ibaraki 3050044, Japan
[5] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan
[6] Natl Ctr Theoret Sci, Phys Div, Taipei 106, Taiwan
[7] Natl Cheng Kung Univ, Ctr Quantum Frontiers Res & Technol QFort, Tainan 701, Taiwan
关键词
2D materials; strain engineering; interlayerexciton; transition metal dichalcogenide; hexagonalboron nitride; atomic-scale etching; ELECTRICAL CONTROL; GRAPHENE; HETEROSTRUCTURES; POLARIZATION; MONOLAYER; DYNAMICS; MOS2;
D O I
10.1021/acs.nanolett.3c01208
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Strainengineering has quickly emerged as a viable option to modifythe electronic, optical, and magnetic properties of 2D materials.However, it remains challenging to arbitrarily control the strain.Here we show that, by creating atomically flat surface nanostructuresin hexagonal boron nitride, we achieve an arbitrary on-chip controlof both the strain distribution and magnitude on high-quality molybdenumdisulfide. The phonon and exciton emissions are shown to vary in accordancewith our strain field designs, enabling us to write and draw any photoluminescencecolor image in a single chip. Moreover, our strain engineering offersa powerful means to significantly and controllably alter the strengthsand energies of interlayer excitons at room temperature. This methodcan be easily extended to other material systems and offers promisefor functional excitonic devices.
引用
收藏
页码:7244 / 7251
页数:8
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