Full-Area i-a-Si:H/ATO/Mg Electron-Selective Contacts for Silicon Solar Cells

被引：3
|
作者：
Liu, Xiaoning [1 ,2 ,3 ,4 ]
Xu, Zhiyuan [1 ,2 ,3 ,4 ]
Yan, Yu [1 ,2 ,3 ,4 ]
Song, Yaya [1 ,2 ,3 ,4 ]
Huang, Qian [1 ,2 ,3 ,4 ]
Ren, Huizhi [1 ,2 ,3 ,4 ]
Zhang, Xiaodan [1 ,2 ,3 ,4 ]
Zhao, Ying [1 ,2 ,3 ,4 ]
Hou, Guofu [1 ,2 ,3 ,4 ]
机构：
[1] Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300350, Peoples R China
[2] Key Lab Photoelect Thin Film Devices & Technol Ti, Tianjin 300350, Peoples R China
[3] Minist Educ, Engn Res Ctr Thin Film Photoelect Technol, Tianjin 300350, Peoples R China
[4] State Key Lab Photovolta Mat & Solar Cells, Tianjin 300350, Peoples R China
来源：
ACS APPLIED ENERGY MATERIALS | 2023年 / 6卷 / 18期
基金：
中国国家自然科学基金;
关键词：
c-Si solar cells; dopant-free passivating contacts; electron-selective contacts; TiOX/Mg; ATO; DOPANT-FREE; PASSIVATING CONTACTS; OXIDE; HETEROJUNCTIONS; MOLYBDENUM;
D O I：
10.1021/acsaem.3c01399
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
TiOX has attracted tremendous research interest as an electron-selective contact (ESCs) in crystalline silicon (c-Si) solar cells due to its reasonable passivating quality and suitable energy band. Al-doped TiOX (ATO) processes more oxygen vacancies, consequently promoting its contact performance. Besides, the work function (WF) can be further optimized after inserting a thin Mg layer, resulting in outstanding contact resistivity (p(c)). In this contribution, we proposed hydrogenated intrinsic amorphous silicon (i-a-Si:H)/ATO/Mg for n-type c-Si solar cells as ESC with excellent Pc of 6 m Omega cm(2) and minority carrier lifetime (tau) of 1.5 ms, and yielded an efficiency of 18.2%. Afterward, a complete loss analysis of the champion cell was carried out using Quokka 2 simulation software to define the dominant loss mechanisms. This paradigm introduces a promising approach for replacing widely used heterocontacts in efficient cSi solar cells.
引用
收藏
页码：9446 / 9454
页数：9
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