Unveiling the Delayed Fluorescence Effects of Triplet-Triplet Annihilation Upconversion on the Photoresponse of Transistor Memory

被引:1
|
作者
Huang, Zi-Yue [1 ]
Weng, Yi-Hsun [1 ]
Yang, Yun-Fang [1 ,2 ]
Lin, Bi-Hsuan [3 ]
Lin, Yan-Cheng [2 ,4 ]
Chen, Wen-Chang [1 ,2 ]
机构
[1] Natl Taiwan Univ, Dept Chem Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Adv Res Ctr Green Mat Sci & Technol, Taipei 10617, Taiwan
[3] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan
[4] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan
关键词
afterglow; charge modulation; photomemory; field-effect transistors; nonvolatile memory; triplet-triplet energy transfer; PHOTOINDUCED RECOVERY; COMPLEXES; PYRENE;
D O I
10.1021/acsphotonics.3c01386
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Delayed fluorescence shows great potential for enhancing the performance of optoelectronic devices. However, the application of triplet-triplet annihilation (TTA) upconversion to phototransistors has remained mysterious. This research investigates the impact of TTA on phototransistor memory by blending poly(1-pyrenemethyl methacrylate) (PPyMA) and tris(2-phenylpyridine)iridium(III) [Ir(ppy)(3)] as a floating gate electret. In the TTA process, PPyMA serves as the emitter, while Ir(ppy)(3) acts as the sensitizer to absorb a longer-wavelength light efficiently. To harness the delayed fluorescence from TTA, 2,7-dioctylbenzo[lmn][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraone (C8-NDI), whose absorbance perfectly overlaps with the delayed fluorescence and prevents the direct excitation from blue light, is employed as the semiconductor channel layer. A comprehensive optical and morphological analysis is conducted to assess the impact of TTA on photomemory devices and confirm the presence of the TTA process within the system. We compare the effects of typical fluorescence (365 nm) and delayed fluorescence (455 nm) on the photoresponse and memory performance of the device with a PPyMA polymer-based electret and PPyMA/Ir(ppy)(3) as a floating gate. Remarkably, PPyMA/Ir(ppy)(3) exhibits superior stability after ten endurance cycles and a higher memory ratio (>10(5)) over a time duration of 10(4) s, outperforming its counterpart of PPyMA. This observation suggests that excitons generated by TTA have an extended lifetime, facilitating more efficient charge transfer. In conclusion, the delayed fluorescence generated from TTA shows the potential to enhance phototransistor memory. The findings exemplify the effectiveness of delayed fluorescence as a mechanism for endowing phototransistors with additional and exceptional memory capability, thereby underlining the potential for future optoelectronic applications.
引用
收藏
页码:4509 / 4518
页数:10
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