Gain recovery in heavily Irradiated Low Gain Avalanche Detectors by high temperature annealing

被引：1

作者：

Mandic, I. ^{[1
]}

Cindro, V. ^{[1
]}

Gorisek, A. ^{[1
]}

Hiti, B. ^{[1
]}

Howard, A. ^{[1
]}

Kljun, Z. ^{[1
]}

Kramberger, G. ^{[1
]}

Krzmanc, M. Macek ^{[1
]}

Mikuz, M. ^{[1
,2
]}

Novak, B. ^{[1
]}

机构：

[1] Jozef Stefan Inst, Jamova 39, Ljubljana, Slovenia

[2] Univ Ljubljana, Fac Math & Phys, Jadranska 19, Ljubljana, Slovenia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2023年 / 1055卷

关键词：

Particle tracking detectors (Solid-state detectors); Radiation-hard detectors; Solid state detectors; LGAD; Annealing; COMPUTATIONAL ANALYSIS;

D O I：

10.1016/j.nima.2023.168553

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Studies of annealing at temperatures up to 450 degrees C with Low Gain Avalanche Detectors (LGAD) irradiated with neutrons are described. It was found that the performance of LGADs irradiated with 1.5e15 n/cm2 was already improved at 5 min of annealing at 250 degrees C. Isochronal annealing for 30 min in 50 degrees C steps between 300 degrees C and 450 degrees C showed that the largest beneficial effect of annealing is at around 350 degrees C. Another set of devices was annealed for 60 min at 350 degrees C and this annealing significantly increased depletion voltage of the gain layer (V-gl). The effect is equivalent to reducing the effective acceptor removal constant by a factor of similar to 4. Increase of V-gl is the consequence of increased effective space charge in the gain layer caused by formation of electrically active defects or re-activation of interstitial boron atoms.

引用

页数：6

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