A 0.8-V Fully Differential Amplifier with 80-dB DC Gain and 8-GHz GBW in 22-nm FDSOI CMOS Technology

被引：1

作者：

Basavaraju, Harshitha ^{[1
,2
]}

Borggreve, David ^{[1
,2
]}

Vanselow, Frank ^{[1
]}

Isa, Erkan Nevzat ^{[1
]}

Maurer, Linus ^{[1
,2
]}

机构：

[1] Fraunhofer EMFT, Munich, Germany

[2] Univ Munich, Neubiberg, Germany

来源：

2023 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS | 2023年

基金：

欧盟地平线“2020”;

关键词：

Folded cascode; high-speed OTA; low voltage; common-mode feedback; ADCs;

D O I：

10.1109/ISCAS46773.2023.10181961

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

In this work we propose a fully differential amplifier, designed in 22 nm FDSOI (fully depleted silicon on insulator), with supply voltage of 0.8 V and achieving 8 GHz gain bandwidth (GBW), 80 dB dc gain and phase margin of 49 degrees in unity gain configuration with a load capacitor of 2 pF. The two-stage folded cascode gain boosted transconductance amplifier (OTA) has been designed to have a inter-stage gain of 8 in a high speed analog-to-digital converter (ADC) and is verified by post-layout simulations.

引用

页数：5

共 10 条

[1] A 0.8-V, 2.88-GHz Double-Tail Latched Comparator in 22-nm FDSOI CMOS Technology
Basavaraju, Harshitha
Borggreve, David
Boehme, Enno
Vanselow, Frank
Isa, Erkan Nevzat
Maurer, Linus
2021 IEEE NORDIC CIRCUITS AND SYSTEMS CONFERENCE (NORCAS), 2021,
[2] A DC to 20 GHz Variable Gain Amplifier with Tunable Input Matching in 22 nm FDSOI Technology
Seyyedrezaei, Seyyedmohsen
Thayyil, Manu Viswambharan
Carta, Corrado
Ellinger, Frank
2021 16TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2021), 2021, : 181 - 184
[3] A 0.8-V, 8-μW, CMOS OTA with 50-dB gain and 1.2-MHz GBW in 18-pF load
Yao, L
Steyaert, M
Sansen, W
ESSCIRC 2003: PROCEEDINGS OF THE 29TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2003, : 297 - 300
[4] 1-Gb/s 80-dBΩ fully differential CMOS transimpedance amplifier in multichip on oxide technology for optical interconnects
Park, SM
Lee, JS
Yoo, HJ
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (06) : 971 - 974
[5] 55 dB DC gain, robust to PVT single-stage fully differential amplifier on 45 nm SOI-CMOS technology
Gomez, H.
Espinosa, G.
ELECTRONICS LETTERS, 2014, 50 (10) : 737 - U172
[6] A 2.3-GHz Fully Integrated DC-DC Converter Based on Electromagnetically Coupled Class-D LC Oscillators Achieving 78.1% Efficiency in 22-nm FDSOI CMOS
Novello, Alessandro
Atzeni, Gabriele
Cristiano, Giorgio
Coustans, Mathieu
Jang, Taekwang
IEEE SOLID-STATE CIRCUITS LETTERS, 2021, 4 : 218 - 221
[7] A 16.4-dBm 20.3% PAE 22-dB Gain 77 GHz Power Amplifier in 65-nm CMOS Technology
Van-Son Trinh
Park, Jung-Dong
IEEE ACCESS, 2021, 9 (09) : 159541 - 159548
[8] A Fully-Differential Travelling-Wave Amplifier up to 110 GHz in a 22 nm FD-SOI CMOS Technology
Gatzastras, Athanasios
Volmer, Christian
Kallfass, Ingmar
2023 18TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC, 2023, : 365 - 368
[9] A 5-6 GHz Low-Noise Amplifier with > 65-dB Variable-Gain Control in 22nm FinFET CMOS Technology
Yeh, Yi-Shin
Lee, Hyung-Jin
2020 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2020, : 371 - 374
[10] Super-Gain-Boosted AB-AB Fully Differential Miller Op-Amp With 156dB Open-Loop Gain and 174MV/V MHZ pF/μW Figure of Merit in 130nm CMOS Technology
Paul, Anindita
Ramirez-Angulo, Jaime
Diaz Sanchez, Alejandro
Lopez-Martin, Antonio J.
Gonzalez Carvajal, Ramon
Li, Frank X.
IEEE ACCESS, 2021, 9 : 57603 - 57617

← 1 →