Excitonic luminescence of iodine-intercalated HfS2

被引:3
|
作者
Zawadzka, N. [1 ]
Wozniak, T. [2 ]
Strawski, M. [3 ]
Antoniazzi, I. [1 ]
Grzeszczyk, M. [1 ]
Olkowska-Pucko, K. [1 ]
Muhammad, Z. [4 ]
Ibanez, J. [5 ]
Zhao, W. [4 ]
Jadczak, J. [6 ]
Stepniewski, R. [1 ]
Babinski, A. [1 ]
Molas, M. R. [1 ]
机构
[1] Univ Warsaw, Inst Expt Phys, Fac Phys, Ul Pasteura 5, PL-02093 Warsaw, Poland
[2] Wroclaw Univ Sci & Technol, Fac Fundamental Problems Technol, Dept Semicond Mat Engn, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland
[3] Univ Warsaw, Fac Chem, Lab Electrochem, Ul Pasteura 1, PL-02093 Warsaw, Poland
[4] Beihang Univ, Hefei Innovat Res Inst, Sch Microelect, Hefei 230013, Peoples R China
[5] CSIC, Geosci Barcelona GEO3BCN, Lluis Sole Sabaris S-N, Catalonia 08028, Barcelona, Spain
[6] Wroclaw Univ Sci & Technol, Dept Expt Phys, Wybrzeze Wyspianskiego 27, PL-50370 Wroclaw, Poland
基金
中国国家自然科学基金;
关键词
TRANSITION-METAL DICHALCOGENIDES;
D O I
10.1063/5.0126894
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoluminescence from bulk HfS2 grown by the chemical vapor transport method is reported. A series of emission lines is apparent at low temperature in the energy range of 1.4-1.5 eV. Two groups of the observed excitonic transitions followed by their replicas involving acoustic and optical phonons are distinguished using classical intensity correlation analysis. The emission is attributed to the recombination of excitons bound to iodine (I-2) molecules intercalated between layers of HfS2. The I-2 molecules are introduced to the crystal during the growth as halogen transport agents in the growth process. Their presence in the crystal is confirmed by secondary ion mass spectroscopy.
引用
收藏
页数:6
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