High-member low-dimensional Sn-based perovskite solar cells

被引:41
|
作者
Li, Hansheng [1 ]
Zang, Zihao [1 ]
Wei, Qi [1 ]
Jiang, Xianyuan [1 ]
Ma, Mingyu [1 ]
Xing, Zengshan [2 ]
Wang, Jingtian [1 ]
Yu, Danni [1 ]
Wang, Fei [1 ]
Zhou, Wenjia [1 ]
Wong, Kam Sing [2 ]
Chow, Philip C. Y. [3 ]
Zhou, Yuanyuan [4 ]
Ning, Zhijun [1 ]
机构
[1] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong 999077, Peoples R China
[3] Univ Hong Kong, Dept Mech Engn, Hong Kong 999077, Peoples R China
[4] Hong Kong Baptist Univ, Dept Phys, Hong Kong 999077, Peoples R China
基金
中国国家自然科学基金;
关键词
Sn-based perovskite; lead-free perovskite solar cells; low-dimensional structure; optoelectronics device; HALIDE PEROVSKITES; TIN; EFFICIENT;
D O I
10.1007/s11426-022-1489-8
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Sn-based perovskites are promising thin-film photovoltaic materials for their ideal bandgap and the eco-friendliness of Sn, but the performance of Sn-based perovskite solar cells is hindered by the short carrier diffusion length and large defect density in nominally-synthesized Sn-based perovskite films. Herein we demonstrate that a long carrier diffusion length is achievable in quasi-2D Sn-based perovskite films consisting of high-member low-dimensional Ruddlesden-Popper (RP) phases with a preferred crystal orientation distribution. The key to the film synthesis is the use of a molecular additive formed by phenylethy-lammonium cations and optimally mixed halide-pseudohalide anions, which favorably tailors the quasi-2D Sn-based perovskite crystallization kinetics. The high-member RP film structure effectively enhances device short-circuit current density, giving rise to an increased power conversion efficiency (PCE) of 14.6%. The resulting device demonstrates a near-unity shelf stability upon 1,000 h in nitrogen. A high reproductivity is also achieved with a count of 50 devices showing PCEs within a narrow range from minimum 13.0% to maximum 14.6%.
引用
收藏
页码:459 / 465
页数:7
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