Band alignment and photocatalytic activity of monoclinic BiVO4 (010) and (100) films with SrTiO3

被引:7
|
作者
Peng, Yaru [1 ]
Zhai, Pengwei [2 ]
Shi, Yuxin [2 ]
Jiang, Haoxiang [3 ,5 ]
Li, Guoqiang [1 ,2 ,4 ,5 ]
机构
[1] Henan Univ, Sch Phys & Elect, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004, Peoples R China
[2] Henan Univ, Natl Demonstrat Ctr Expt Phys & Elect Educ, Sch Phys & Elect, Kaifeng 475004, Peoples R China
[3] South China Normal Univ, Sch Phys & Telecommun Engn, Guangdong Prov Key Lab Quantum Engn & Quantum Mat, Guangzhou 510006, Peoples R China
[4] Henan Univ, Sch Phys & Elect, Int Joint Res Lab New Energy Mat & Devices Henan P, Kaifeng 475004, Peoples R China
[5] Henan Univ, Sch Phys & Elect, Key Lab Photovolta Mat Henan Prov, Kaifeng 475004, Peoples R China
关键词
Thin films; Band alignment; Photocatalysis; BiVO4(010); BiVO4(100); DIFFERENT FACETS; PERFORMANCE; WATER;
D O I
10.1016/j.apsusc.2023.156482
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The crystal plane with the highest electron and hole mobility in a material is very important to physical and chemical properties. Herein, the BiVO4 (BVO) thin films exposed (010) or (10 0) planes which pointed out as the facets with the highest electron and hole mobility, and formed the interface with SrTiO3 (STO) were fabricated by magnetron sputtering. The band edge offsets calculation results of oriented BVO and STO show that the conduction band and valence band positions of the BVO (010) plane are 0.23 eV higher than those of (100). The average generation rates of H2O2 in BVO(1 0 0) are 5.3 x 10-2 and 3.8 x 10-1 mu mol h-1 under 440 nm monochromatic light and full arc Xe lamp irradiation, which are 1.8 and 1.6 times higher than those in BVO (010), respectively.
引用
收藏
页数:6
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