Enhancement of interfacial spin transparency in Py/NiO/Pt heterostructure

被引:4
|
作者
Dong, Jing [1 ]
Cheng, Chen [1 ]
Wei, Jinwu [2 ,3 ,4 ]
Xu, Hongjun [2 ,3 ,4 ]
Zhang, Yu [2 ]
Wang, Yuqiang [2 ]
Zhu, Zengwei [1 ]
Li, Liang [1 ]
Wu, Hao [4 ]
Yu, Guoqiang [2 ,3 ,4 ]
Han, Xiufeng [2 ,3 ,4 ]
机构
[1] Huazhong Univ Sci & Technol, Wuhan Natl High Magnet Field Ctr, Sch Phys, Wuhan, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing, Peoples R China
[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing, Peoples R China
[4] Songshan Lake Mat Lab, Dongguan, Peoples R China
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
ORBIT TORQUE; DRIVEN;
D O I
10.1063/5.0143295
中图分类号
O59 [应用物理学];
学科分类号
摘要
This work reports the enhancement of damping-like and field-like spin-orbit torque (SOT) efficiencies and interfacial spin transparency (T-in) in the Py/NiO/Pt heterostructure. The SOT efficiencies and T-in are characterized by combining the spin-torque ferromagnetic resonance (ST-FMR) and the spin-pumping (SP) techniques. The inevitable inverse spin Hall voltage contamination induced by SP in the ST-FMR spectrum is extracted and subtracted by combining additional SP measurements, which allows obtaining accurate SOT efficiencies and T-in. The damping-like and field-like SOT efficiencies vary with the NiO insertion layer thickness, which is a result of the change of T-in. The maximum T-in reaches similar to 0.82 for a 0.6 nm-thick NiO layer. This work shows that NiO insertion is an effective method for enhancing T-in and, hence, the SOT efficiency.
引用
收藏
页数:6
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