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Low-temperature CO preferential oxidation in H2-rich stream over Indium modified Pd-Cu/Al2O3 catalyst
被引:2
|作者:
Yue, Lijun
[1
,2
]
Zhao, Wanjun
[1
,2
]
Li, Jinfang
[1
,2
]
Wu, Ruifang
[1
]
Wang, Yongzhao
[1
]
Zhang, Hongxi
[1
]
Zhao, Yongxiang
[1
]
机构:
[1] Shanxi Univ, Engn Res Ctr, Minist Educ Fine Chem, Taiyuan 030006, Peoples R China
[2] Shanxi Univ, Sch Chem & Chem Engn, Taiyuan 030006, Peoples R China
基金:
中国国家自然科学基金;
关键词:
Low-temperature CO preferential oxidation;
Pd-Cu/Al2O3;
Indium doping;
ROOM-TEMPERATURE;
PD-CU-CL-X/AL2O3;
CATALYST;
ADSORPTION STRENGTH;
OXYGEN ACTIVATION;
PD;
PERFORMANCE;
PROX;
IN2O3;
CO3O4;
OXIDE;
D O I:
10.1016/j.jcis.2024.02.003
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
The impact of Indium (In) doping upon the catalytic performance of Pd-Cu/Al2O3 for carbon monoxide preferential oxidation (CO-PROX) in hydrogen (H-2) rich atmosphere at low temperature has been studied. A series of catalysts with extremely low palladium (Pd) loading (0.06 wt%) are synthesized by the facile co-impregnation method. When the In/copper (Cu) atomic ratio equals 0.25, Pd-Cu-In-0.25/Al2O3 can keep 40% CO conversion and 100% carbon dioxide (CO2) selectivity at least 120 min at 30 degrees C, which is significantly superior to the catalytic performance of Pd-Cu/Al2O3. The elaborate characterization findings reveal that the added In species to Pd-Cu/Al2O3 causes Indium oxide (In2O3) to generate, which produces the interaction of In2O3 with Pd-Cu/Al2O3, further promoting the dispersion of copper chloride hydroxide (Cu2Cl(OH)(3)). Moreover, the modification of In facilitates the re-oxidation of Pd-0 to Pd+ through reducing the formation of palladium hydride (PdHx) during the CO-PROX reaction. Meanwhile, the addition of In leads to the decrease of Cu+ electron cloud density, making it easier to be oxidized to Cu2+. Collectively, the easy re-oxidation of Pd-0 and Cu+ is favorable to fulfill the Wacker cycle between Pd and Cu species, thus improving the catalytic performance for CO-PROX.
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页码:109 / 118
页数:10
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