Low-temperature CO preferential oxidation in H2-rich stream over Indium modified Pd-Cu/Al2O3 catalyst

被引:2
|
作者
Yue, Lijun [1 ,2 ]
Zhao, Wanjun [1 ,2 ]
Li, Jinfang [1 ,2 ]
Wu, Ruifang [1 ]
Wang, Yongzhao [1 ]
Zhang, Hongxi [1 ]
Zhao, Yongxiang [1 ]
机构
[1] Shanxi Univ, Engn Res Ctr, Minist Educ Fine Chem, Taiyuan 030006, Peoples R China
[2] Shanxi Univ, Sch Chem & Chem Engn, Taiyuan 030006, Peoples R China
基金
中国国家自然科学基金;
关键词
Low-temperature CO preferential oxidation; Pd-Cu/Al2O3; Indium doping; ROOM-TEMPERATURE; PD-CU-CL-X/AL2O3; CATALYST; ADSORPTION STRENGTH; OXYGEN ACTIVATION; PD; PERFORMANCE; PROX; IN2O3; CO3O4; OXIDE;
D O I
10.1016/j.jcis.2024.02.003
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The impact of Indium (In) doping upon the catalytic performance of Pd-Cu/Al2O3 for carbon monoxide preferential oxidation (CO-PROX) in hydrogen (H-2) rich atmosphere at low temperature has been studied. A series of catalysts with extremely low palladium (Pd) loading (0.06 wt%) are synthesized by the facile co-impregnation method. When the In/copper (Cu) atomic ratio equals 0.25, Pd-Cu-In-0.25/Al2O3 can keep 40% CO conversion and 100% carbon dioxide (CO2) selectivity at least 120 min at 30 degrees C, which is significantly superior to the catalytic performance of Pd-Cu/Al2O3. The elaborate characterization findings reveal that the added In species to Pd-Cu/Al2O3 causes Indium oxide (In2O3) to generate, which produces the interaction of In2O3 with Pd-Cu/Al2O3, further promoting the dispersion of copper chloride hydroxide (Cu2Cl(OH)(3)). Moreover, the modification of In facilitates the re-oxidation of Pd-0 to Pd+ through reducing the formation of palladium hydride (PdHx) during the CO-PROX reaction. Meanwhile, the addition of In leads to the decrease of Cu+ electron cloud density, making it easier to be oxidized to Cu2+. Collectively, the easy re-oxidation of Pd-0 and Cu+ is favorable to fulfill the Wacker cycle between Pd and Cu species, thus improving the catalytic performance for CO-PROX.
引用
收藏
页码:109 / 118
页数:10
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