Fully-coupled piezoelectric field in the semiconductor heterostructure with an ellipsoidal anisotropic inhomogeneity

被引：3
|
作者：
He, Junxiong [1 ]
Ye, Wei [1 ,2 ]
机构：
[1] Chongqing Univ, Coll Aerosp Engn, Chongqing 400044, Peoples R China
[2] Chongqing Univ, Chongqing Key Lab Heterogeneous Mat Mech, Chongqing 400044, Peoples R China
来源：
MECHANICS OF MATERIALS | 2023年 / 187卷
基金：
中国国家自然科学基金;
关键词：
Generalized Green 's function; Fully-coupled analysis; Inclusion; Inhomogeneity; Heterostructure; ELASTIC FIELD; STRAIN DISTRIBUTIONS; QUANTUM-DOT; COMPOSITE-MATERIALS; GREENS-FUNCTIONS; ESHELBY TENSORS; NANO-INCLUSIONS; DISLOCATIONS; SOLIDS; MODULI;
D O I：
10.1016/j.mechmat.2023.104837
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The elastic and piezoelectric fields induced by misfit strain in semiconductor heterostructures are crucial for the design of semiconductor devices. This work formulates analytically the fully-coupled piezoelectric field in the heterostructure with a general anisotropic inhomogeneity. The application of the ellipsoidal inhomogeneity is numerically solved by implementations of the generalized Green's function and its derivative as well as their surface integrals. Elaborations will be made on the similarities and differences for the usage of the inclusion and inhomogeneity in the fully-coupled analysis, along with some discussions about the shape and size effects in the end.
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页数：12
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