Europium diffusion in ammonothermal gallium nitride

被引：4

作者：

Jaroszynski, P. ^{[1
]}

Grzanka, E. ^{[1
]}

Grabowski, M. ^{[1
]}

Staszczak, G. ^{[1
]}

Prozheev, I. ^{[3
]}

Jakiela, R. ^{[2
]}

Tuomisto, F. ^{[3
]}

Bockowski, M. ^{[1
]}

机构：

[1] Polish Acad Sci, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland

[2] Polish Acad Sci Warsaw, Inst Phys, Aleja Lotnikow 32-46, PL-02668 Warsaw, Poland

[3] Univ Helsinki, Dept Phys, Gustaf Hallstromin Katu 2, Helsinki 00560, Finland

来源：

APPLIED SURFACE SCIENCE | 2023年 / 625卷

基金：

欧盟地平线“2020”;

关键词：

Ultra-high pressure annealing (UHPA); Ion implantation; Europium; Diffusion doping; Ammonothermal GaN (Am-GaN); Gallium Nitride; EU3+ LUMINESCENCE; GLASSES;

D O I：

10.1016/j.apsusc.2023.157188

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Europium doping of gallium nitride using a novel ultra-high pressure annealing method was investigated. Ammonothermal gallium nitride substrates (n-type) were used as europium ion implantation targets using beam energy of 490 keV and ion fluences ranging from 1 x 1015 to 1 x 1016 Eu/cm2. The implanted samples were annealed at temperatures between 1473 K and 1753 K in high nitrogen pressure. Europium concentration profiles were analyzed along the [0001] crystallographic direction. The morphology and structural quality of implanted and annealed samples were examined. The "out-diffusion" phenomenon was noted. The presence of optically active EuGa-X defect complexes was suggested based on the analysis of photoluminescence spectra measured at low temperature (20 K). Limitations of diffusion-based europium doping of ammonothermal gallium nitride are discussed.

引用

页数：10

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