Formation of β-FeSi2 nanodots by SiH4 exposure to Fe nanodots

被引：0

作者：

Saito, Haruto ^{[1
]}

Makihara, Katsunori ^{[1
]}

Taoka, Noriyuki ^{[2
]}

Miyazaki, Seiichi ^{[1
]}

机构：

[1] Nagoya Univ, Furo Cho,Chikusa Ku, Nagoya 4648603, Japan

[2] Aichi Inst Technol, 1247 Yachigusa,Yakusa Cho, Toyota 4700392, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2024年 / 63卷 / 02期

关键词：

photoluminescence; nanodots; beta-FeSi2; ELECTRONIC-PROPERTIES;

D O I：

10.35848/1347-4065/ad1898

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated the formation of beta-FeSi2 nanodots (NDs) with an areal density as high as 10(11) cm(-2) on SiO2 by exposing Fe NDs to SiH4 at 400 degrees C and characterized their RT light-emission properties. After SiH4 exposure, even at 1.0 Pa for 60 s, stable photoluminescence (PL) signals, being characteristic of the semiconducting phase of beta-FeSi2, were observed in the energy region from 0.7 to 0.85 eV. With an increase in the amount of SiH4 exposure from 60 to 600 Pa center dot sec, PL intensity increased by a factor of similar to 13. Note that, with a further increase in the amount of SiH4 over 600 Pa center dot sec, the PL intensity is weakened slightly. The observed decrease in the PL intensity is attributable to the selective growth of Si onto the NDs after the formation of the beta-FeSi2 phase. (c) 2024 The Japan Society of Applied Physics

引用

页数：4

共 50 条

[41] Understanding the Formation of Complex Phases: The Case of FeSi2
Turchi, Patrice E. A.
Ivashchenko, Volodymyr I.
Shevchenko, V. I.
Gorb, Leonid
Leszczynski, Jerzy
Perron, Aurelien
Bergamaschini, Roberto
APPLIED SCIENCES-BASEL, 2023, 13 (23):
[42] Direct formation of β-FeSi2 in evacuated fused ampoule
Oikawa, Y
Ozaki, H
INTERMETALLICS, 2002, 10 (04) : 391 - 397
[43] Formation of SiH3+ ions in reactions of small hydrocarbon ions with SiH4
Bano, G
Luca, A
Glosík, J
Zakouril, P
Lindinger, W
CZECHOSLOVAK JOURNAL OF PHYSICS, 2000, 50 : 251 - 257
[44] Formation of β-FeSi2 layers on Si(001) substrates
Tanaka, Masaya
Kumagai, Yoshinao
Suemasu, Takashi
Hasegawa, Fumio
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (6 A): : 3620 - 3624
[45] SiH4 exposure of GaN surfaces:: A useful tool for highlighting dislocations
Oliver, Rachel A.
Kappers, Menno J.
Sumner, Joy
Datta, Ranjan
Humphreys, Colin J.
GAN, AIN, INN AND RELATED MATERIALS, 2006, 892 : 631 - +
[46] Formation of β-FeSi2 thin films using laser ablation
Komuro, S
Katsumata, T
Morikawa, T
Kokai, H
Zhao, X
Aoyagi, Y
JOURNAL OF CRYSTAL GROWTH, 2002, 237 : 1961 - 1965
[47] Direct formation of β-FeSi2 on substrate in evacuated sealed ampoule
Oikawa, Y
Kim, C
Ozaki, H
XXI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '02, 2002, : 110 - 113
[48] Formation process of β-FeSi2 from amorphous Fe-Si synthesized by ion implantation: Fe concentration dependence
Naito, M.
Ishimaru, M.
JOURNAL OF MICROSCOPY, 2009, 236 (02) : 123 - 127
[49] Early stage of the crystallization in amorphous Fe-Si layers: Formation and growth of metastable α-FeSi2
Naito, Muneyuki
Ishimaru, Manabu
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 267 (8-9): : 1290 - 1293
[50] Formation process of β-FeSi2/Si heterostructure in high-dose Fe ion implanted Si
Ishimaru, M
Omae, K
Bae, IT
Naito, M
Hirotsu, Y
Valdez, JA
Sickafus, KE
JOURNAL OF APPLIED PHYSICS, 2006, 99 (11)

← 1 2 3 4 5 →