Lead-free defective halide perovskites Cs2SnX6 (X = Cl, Br, I) for highly robust formaldehyde sensing at room temperature

被引:12
|
作者
Yin, Yan-Yan [2 ]
Zhang, Le-Xi [1 ]
An, Xing-Yan
Wang, Chao-Jie [1 ]
Zhang, Qing-Qian [2 ]
Bie, Li-Jian [1 ]
机构
[1] Tianjin Univ Technol, Natl Demonstrat Ctr Expt Funct,Mat Educ, Sch Mat Sci & Engn, Key Lab Display Mat & Photoelect Devices, Tianjin 300384, Peoples R China
[2] Nankai Univ, Dept Environm Sci & Engn, Binhai Coll, Tianjin 300270, Peoples R China
基金
中国国家自然科学基金;
关键词
Precipitation; Perovskite; Sensors; Defects; Cs2SnI6; PERFORMANCE;
D O I
10.1016/j.scriptamat.2023.115541
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this contribution, all-inorganic lead-free halide perovskites Cs2SnX6 (X = Cl, Br, I) were synthesized by simple room-temperature precipitation. Material characterization demonstrated their feature in rich defects of halogen vacancies. As room-temperature formaldehyde (HCHO) sensing materials, Cs2SnX6 exhibited reliable sensitivity order of Cs2SnCl6 < Cs2SnBr6 < Cs2SnI6. Notably, the Cs2SnI6 sensor showed excellent selectivity for HCHO at room temperature with high response (Sr = 78, 100 ppm), short response/recovery time (3.6 s/7.2 s), good repeatability and long-term stability. Finally, the HCHO sensing mechanism was investigated via in-situ infrared analysis, conforming abundant intermediates of dioxymethylene, formate, and carbonate. The excellent sensing performance is attributed to rich iodine vacancies (VI) as active sites induced boosted stepwise oxidation of HCHO molecules on Cs2SnI6 surface. This work provides a fine candidate for practical HCHO detection at room temperature, and furthermore, gives new insights in designing halide perovskites for next-generation sensory devices.
引用
收藏
页数:5
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