Efficiency Limits in Coalesced AlGaN Nanowire Ultraviolet LEDs

被引:3
|
作者
May, Brelon J. [1 ]
Hettiaratchy, Elline C. [1 ]
Wang, Binbin [1 ]
Selcu, Camelia M. [2 ]
Esser, Bryan D. [1 ]
Mccomb, David W. [1 ]
Myers, Roberto C. [1 ,2 ,3 ]
机构
[1] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA
[2] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA
[3] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA
来源
基金
美国国家科学基金会;
关键词
AlGaN; nanowire LEDs; ultraviolet LEDs; wide bandgap semiconductors; LIGHT-EMITTING-DIODES; OVERGROWTH; ALN;
D O I
10.1002/pssr.202300399
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanowire AlGaN III-nitride LEDs are claimed as potential high-efficiency solid-state photon sources spanning to the short-wavelength deep ultraviolet (UV). Nanowire LEDs (NWLEDs) emitting in the UV are compared with a transparent n-AlGaN top electrode formed by coalescing the top region of nanowire-ensemble LEDs with commonly employed opaque conformal metallic electrodes used for nanowire-based devices. The use of a transparent contact results in an increase in the wall plug efficiency of >25x, exceeding the expected increase due to enhanced photon-extraction efficiency. Increased nanowire connectivity reduces the short-circuit pathways, enabling higher device yields of relatively large-area (>1 mm(2)) UV nanowire-ensemble LEDs. Despite these large relative improvements, the absolute output efficiency remains miniscule (<1 m%). Electroluminescence microscopy demonstrates that <0.1% of nanowires within the ensemble contribute to emission. The single-nanowire efficiency is estimated and points toward improvement of the homogeneity of the injection current as a crucial step for realizing commercially viable UV NWLEDs.
引用
收藏
页数:6
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